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SPI306

Onsemi

SPI306 by Onsemi

SPI306 by Onsemi is a Linear Position Sensor with VCEsat of 0.6V, Output Current of 1A, and Operating Temperature range from -25 to 75 °C. Ideal for applications requiring precise gap sensing in tight spaces such as robotics, automotive, and industrial automation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 798 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 2,832 parts In-Stock

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TANS Electronics

Latvia . 2,461 parts In-Stock

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UHIMA Technologies

Türkiye . 760 parts In-Stock

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Problanco Electronics

Mexico . 491 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 164 parts In-Stock

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Overview

Enhance your industrial applications with the SPI306 Linear Position Sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi has designed this sensor to provide accurate and precise measurements in a wide range of settings. From robotics to automotive systems, the SPI306 offers unparalleled value with its low VCEsat, high output voltage, and wide operating temperature range. Trust Onsemi to deliver cutting-edge technology that will elevate your projects to new heights.

Feature Benefit Bullets

Maximum VCEsat: 0.6 V

Low VCEsat helps in reducing power consumption and heat dissipation, making the product more energy efficient.

Output Circuit Type: Transistor

Transistor-based output circuit provides fast response times and accurate readings, enhancing the performance of the sensor.

Maximum Operating Temperature: 75 °C

Wide operating temperature range allows the sensor to be used in various environmental conditions without any performance issues.

Minimum Operating Temperature: -25 °C

Ability to operate at low temperatures makes this sensor suitable for applications in cold environments or extreme weather conditions.

Maximum Output Voltage: 20 V

High output voltage capability allows for compatibility with a wide range of control systems and devices.

Maximum Operating Current: 50 mA

Low operating current requirement helps in reducing power consumption and extending the lifespan of the sensor.

Maximum Output Current: 1 A

High output current capacity allows the sensor to drive external devices directly, eliminating the need for additional amplification circuitry.

Gap Size: 0.0015 mm

Extremely small gap size ensures high-precision measurements and accurate position sensing, making the sensor ideal for critical applications.

Technical Specifications

Linear Position Sensors SPI306 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.0015 mm

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Output Current:

1 A

Maximum Output Voltage:

20 V

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

.6 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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