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SPI314

Onsemi

SPI314 by Onsemi

SPI314 by Onsemi is a Linear Position Sensor with VCEsat of 1.2V, Output Voltage of 20V, and Operating Current of 50mA. Ideal for applications requiring precise gap sensing in environments ranging from -25 °C to 80°C.

Median Price

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Lifecycle Status

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Vyrian

USA . 1,384 parts In-Stock

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Digiode

USA . 322 parts In-Stock

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Kulean Microsystems

USA . 7,100 parts In-Stock

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SupplyDigital Components

Austria . 6,194 parts In-Stock

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TANS Electronics

Latvia . 2,682 parts In-Stock

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Corphita

USA . 2,412 parts In-Stock

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Problanco Electronics

Mexico . 2,194 parts In-Stock

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UHIMA Technologies

Türkiye . 565 parts In-Stock

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Corohmni

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Overview

Enhance the performance of your linear position sensing systems with the SPI314 by Onsemi. Designed with precision and reliability in mind, this sensor offers unparalleled accuracy and durability for a wide range of applications. Whether you're in the automotive industry, industrial automation, or robotics, the SPI314 provides consistent and precise measurements, ensuring optimal performance every time. Trust in Onsemi's reputation for quality and innovation, and experience the value that the SPI314 brings to your projects.

Feature Benefit Bullets

Maximum VCEsat: 1.2 V

Low VCEsat helps in reducing power consumption and heat dissipation, making the sensor more efficient and reliable.

Output Circuit Type: Transistor

Transistor output circuit provides high accuracy and fast response, suitable for precise linear position measurements.

Maximum Operating Temperature: 80 °C

Wide operating temperature range allows the sensor to be used in various environmental conditions without loss of performance.

Minimum Operating Temperature: -25 °C

Ability to operate in low temperatures makes this sensor suitable for applications where cold environments are common.

Maximum Output Voltage: 20 V

High output voltage capability allows for compatibility with a wide range of industrial control systems.

Maximum Operating Current: 50 mA

Low operating current ensures minimal power consumption, reducing overall operating costs and enhancing energy efficiency.

Maximum Output Current: 2.5 A

High output current capacity enables the sensor to drive external loads directly, eliminating the need for additional amplification circuitry.

Gap Size: 0.001 mm

Ultra-small gap size provides high precision in linear position measurements, ensuring accurate and reliable data output.

Technical Specifications

Linear Position Sensors SPI314 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.001 mm

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Output Current:

2.5 A

Maximum Output Voltage:

20 V

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

1.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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