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SPI315-05

Onsemi

SPI315-05 by Onsemi

SPI315-05 by Onsemi is a Linear Position Sensor with Max VCEsat of 1.2V, Darlington Output Circuit Type, and Response Time of 100us. It operates b/w -20 °C to 80°C, suitable for THROUGH HOLE MOUNT applications requiring precise gap sensing up to 0.001mm.

Median Price

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Lifecycle Status

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Digiode

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Overview

Elevate your linear position sensing with the SPI315-05 by Onsemi. This top-quality sensor boasts a Darlington output circuit type, ensuring reliable and accurate performance in a variety of applications. From automotive to industrial automation, this sensor provides precise feedback for your system's positioning needs. Trust in Onsemi's reputation for excellence and experience the value and benefits this sensor brings to your projects. Upgrade to the SPI315-05 and elevate your precision sensing capabilities today.

Feature Benefit Bullets

Maximum VCEsat: 1.2 V

Low VCE saturation voltage helps in reducing power dissipation and improving efficiency of the sensor.

Output Circuit Type: Darlington

Darlington configuration provides high gain and allows for minimal input current to control the sensor, enhancing sensitivity and accuracy.

Maximum Operating Temperature: 80 °C

Wide temperature range ensures the sensor can operate in varying environmental conditions without affecting performance.

Response Time: 100 us

Fast response time allows for quick and accurate measurement of linear position changes, making the sensor suitable for dynamic applications.

Minimum Operating Temperature: -20 °C

Ability to operate at low temperatures ensures the sensor can be used in cold environments without any issues.

Maximum Output Voltage: 20 V

High output voltage capability allows the sensor to work with a wide range of input signals without requiring additional amplification.

Maximum Operating Current: 50 mA

Low operating current helps in saving power and reducing heat generation, making the sensor energy-efficient.

Maximum Output Current: 15 A

High output current capacity enables the sensor to handle heavy loads and operate reliably under high current conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a secure and stable installation method for the sensor, ensuring it stays in place even in demanding applications.

Gap Size: 0.001 mm

Very small gap size allows for precise and accurate measurement of linear position changes, making the sensor ideal for high-precision applications.

Technical Specifications

Linear Position Sensors SPI315-05 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.001 mm

Mounting Feature:

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Darlington

Maximum Output Current:

15 A

Maximum Output Voltage:

20 V

Response Time:

100 us

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

1.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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