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SPI304-04

Onsemi

SPI304-04 by Onsemi

SPI304-04 by Onsemi is a Linear Position Sensor with VCEsat of 0.5V, Output Current of 0.3A, and Operating Temperature range from -25 to 80 °C. Ideal for applications requiring precise gap sensing in THROUGH HOLE MOUNT setups.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 6,735 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Corphita

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Kulean Microsystems

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UHIMA Technologies

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Corohmni

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Overview

Discover the SPI304-04 by Onsemi, a top-quality linear position sensor designed to provide accurate and reliable measurements. Manufactured by Onsemi, a trusted name in the industry, this sensor offers unparalleled performance and durability. Ideal for a wide range of applications, from automotive to industrial, the SPI304-04 delivers precise results with ease. Experience the value and benefits of this advanced sensor, ensuring efficiency and precision in every use. Upgrade your systems with the SPI304-04 and elevate your performance to new heights.

Feature Benefit Bullets

Maximum VCEsat: 0.5 V

Low VCEsat ensures minimal voltage drop across the sensor, resulting in accurate and reliable output readings.

Output Circuit Type: Transistor

Transistor output circuit type allows for fast response time and precise signal amplification, enhancing the sensor's performance.

Maximum Operating Temperature: 80 °C

Wide operating temperature range ensures the sensor can perform reliably in various environmental conditions, making it versatile.

Minimum Operating Temperature: -25 °C

The sensor can operate in low-temperature conditions, making it suitable for a wide range of applications.

Maximum Output Voltage: 20 V

High maximum output voltage provides flexibility in the sensor's output signal range, making it compatible with a variety of systems.

Maximum Operating Current: 50 mA

Low operating current ensures minimal power consumption, making the sensor energy-efficient.

Maximum Output Current: 0.3 A

High maximum output current allows the sensor to drive external loads or circuits, increasing its application capabilities.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and stable installation of the sensor, ensuring accurate and consistent readings.

Gap Size: 0.001 mm

Ultra-thin gap size enables precise measurement of linear position, making the sensor ideal for applications requiring high accuracy.

Technical Specifications

Linear Position Sensors SPI304-04 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.001 mm

Mounting Feature:

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Output Circuit Type:

Transistor

Maximum Output Current:

.3 A

Maximum Output Voltage:

20 V

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

.5 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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