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SPI315-35

Onsemi

SPI315-35 by Onsemi

SPI315-35 by Onsemi is a Linear Position Sensor with Max VCEsat of 1.2V, Darlington Output Circuit Type, and Response Time of 100us. Ideal for applications requiring precise position sensing in environments ranging from -20 °C to 80°C.

Median Price

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Lifecycle Status

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Digiode

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Kepictronics

USA . 12,930 parts In-Stock

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TANS Electronics

Latvia . 5,841 parts In-Stock

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Kulean Microsystems

USA . 5,558 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 2,092 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Get ready to experience unparalleled precision and reliability with the SPI315-35 linear position sensor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge technology and superior quality in every product. The SPI315-35 is designed for a wide range of applications, offering seamless integration and exceptional performance. Elevate your projects with this innovative sensor that provides unmatched value, benefits, and advantages to customers. Trust Onsemi to provide the best solution for all your linear position sensing needs.

Feature Benefit Bullets

Maximum VCEsat: 1.2 V

Low VCEsat helps in minimizing power losses, making the product energy efficient.

Output Circuit Type: Darlington

Darlington circuit configuration provides high gain and better performance, suitable for precise linear position sensing.

Maximum Operating Temperature: 80 °C

Wide operating temperature range enables the sensor to function effectively in various environmental conditions.

Response Time: 100 us

Fast response time ensures quick and accurate measurement of linear position changes.

Minimum Operating Temperature: -20 °C

The ability to operate in low temperatures makes it suitable for applications in cold environments.

Maximum Output Voltage: 20 V

High output voltage capability allows for signal transmission over longer distances without loss of quality.

Maximum Operating Current: 50 mA

Low operating current requirements help in reducing power consumption and extending the product's lifespan.

Maximum Output Current: 15 A

High output current capacity makes the sensor suitable for handling heavy loads in industrial applications.

Mounting Feature: SURFACE MOUNT

Surface mount design offers easy installation and integration into electronic systems.

Gap Size: 0.001 mm

Ultra-small gap size allows for high precision measurement of linear position changes with minimal error.

Technical Specifications

Linear Position Sensors SPI315-35 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.001 mm

Mounting Feature:

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Darlington

Maximum Output Current:

15 A

Maximum Output Voltage:

20 V

Response Time:

100 us

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

1.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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