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SPI315-65

Onsemi

SPI315-65 by Onsemi

SPI315-65 by Onsemi is a Linear Position Sensor with VCEsat of 1.2V, Darlington output circuit, and max temp of 80 °C. Ideal for applications requiring fast response time (100us), operating in temp range -20 to 80°C, and output voltage up to 20V. Suitable for surface mount installations with gap size of 0.001mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,033 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,429 parts In-Stock

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Problanco Electronics

Mexico . 1,621 parts In-Stock

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Corphita

USA . 1,578 parts In-Stock

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TANS Electronics

Latvia . 752 parts In-Stock

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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SupplyDigital Components

Austria . 440 parts In-Stock

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Corohmni

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Overview

Upgrade your linear position sensing with the SPI315-65 by Onsemi, a high-quality sensor designed to provide accurate and reliable measurements. Manufactured by industry leader Onsemi, this sensor is perfect for applications such as automotive, industrial automation, and robotics. Offering a fast response time and low VCEsat, this sensor ensures precise results while operating at a wide temperature range. Experience the value of improved performance and efficiency with the SPI315-65 by Onsemi.

Feature Benefit Bullets

Maximum VCEsat: 1.2 V

Low VCEsat means lower power consumption and heat dissipation, making this sensor energy efficient and reliable.

Output Circuit Type: Darlington

Darlington circuit provides high gain and low saturation voltage, ensuring accurate and stable output signals.

Maximum Operating Temperature: 80 °C

Wide operating temperature range allows this sensor to be used in various environments without compromising performance.

Response Time: 100 us

Fast response time enables quick and precise measurement of linear position changes.

Minimum Operating Temperature: -20 °C

With a low minimum operating temperature, this sensor can function reliably even in cold conditions.

Maximum Output Voltage: 20 V

High output voltage capability provides flexibility in interfacing with different systems and devices.

Maximum Operating Current: 50 mA

Low operating current requirement ensures minimal power consumption and extends the sensor's lifespan.

Mounting Feature: SURFACE MOUNT

Surface mount installation offers convenient and secure mounting options for easy integration into various systems.

Gap Size: 0.001 mm

Extremely small gap size allows for precise linear position sensing with high accuracy and resolution.

Technical Specifications

Linear Position Sensors SPI315-65 attributes and parameters. Explore more Linear Position Sensors devices from Onsemi

Specs

Gap Size:

.001 mm

Mounting Feature:

No. of Channels:

1

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Output Circuit Type:

Darlington

Maximum Output Voltage:

20 V

Response Time:

100 us

Sub-Category:

Position, Linear, Photoelectric Sensors

Maximum VCEsat:

1.2 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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