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SB1003M3

Onsemi

SB1003M3 by Onsemi

SB1003M3 by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.5V. Its small outline package makes it suitable for surface mount applications in electronics, offering fast reverse recovery time of 0.01 us at an operating temperature up to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,496 parts In-Stock

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Vyrian

USA . 611 parts In-Stock

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TANS Electronics

Latvia . 8,350 parts In-Stock

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SupplyDigital Components

Austria . 8,126 parts In-Stock

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Corphita

USA . 2,003 parts In-Stock

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Kulean Microsystems

USA . 1,656 parts In-Stock

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Problanco Electronics

Mexico . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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Corohmni

South Africa . 280 parts In-Stock

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Overview

The SB1003M3 by Onsemi is a top-of-the-line Schottky rectifier diode that boasts high quality and reliability. Manufactured by industry leader Onsemi, this diode offers unparalleled performance and efficiency in a variety of applications. Whether you're looking to improve power conversion, reduce energy loss, or enhance circuit protection, the SB1003M3 delivers unmatched value and benefits. Trust Onsemi's expertise and innovation to take your projects to the next level with the SB1003M3 diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and robust housing for the diode, ensuring long-term reliability and performance.

Config: SINGLE

Simplifies the circuit design by having a single diode instead of multiple diodes.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.01 us

Ensures fast switching speed, making it suitable for high-frequency applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and alignment on circuit boards.

No. of Terminals: 3

Provides multiple connection points for versatility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications where compact size is crucial.

Maximum Operating Temperature: 125 °C

Can withstand elevated temperatures, ensuring reliable operation in varying environments.

Terminal Position: DUAL

Allows for flexible mounting options and ease of connection in different circuit layouts.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC, making it suitable for rectification applications.

Maximum Forward Voltage (VF): 0.5 V

Low forward voltage drop results in reduced power losses and improved efficiency.

Maximum Output Current: 1 A

Capable of handling moderate current loads, suitable for various electronic devices.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard silicon diodes.

Terminal Form: FLAT

Simplifies soldering and connection process, ensuring secure and stable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Can handle voltages up to 30V in reverse bias, making it suitable for a wide range of applications.

Maximum Non Repetitive Peak Forward Current: 10 A

Can handle short-term high peak currents without damage, suitable for surge protection in circuits.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and durability, making them a common choice in electronic circuits.

Technical Specifications

Diodes & Rectifiers SB1003M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB1003M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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