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SB1003EJ

Onsemi

SB1003EJ by Onsemi

SB1003EJ by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.55V. It has a fast reverse recovery time of 0.01us and can handle up to 30V peak reverse voltage. Ideal for surface mount applications in electronics requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,709 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 6,728 parts In-Stock

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Problanco Electronics

Mexico . 6,029 parts In-Stock

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TANS Electronics

Latvia . 2,852 parts In-Stock

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SupplyDigital Components

Austria . 1,292 parts In-Stock

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UHIMA Technologies

Türkiye . 830 parts In-Stock

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Corphita

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Corohmni

South Africa . 127 parts In-Stock

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Overview

The Onsemi SB1003EJ is a top-of-the-line rectifier diode that offers superior performance and reliability. As a leading manufacturer in the industry, Onsemi guarantees quality and precision in all their products. Ideal for a wide range of applications, this Schottky diode provides fast switching speeds and low forward voltage drop, making it perfect for power supplies, automotive electronics, and more. Customers can trust in the value and benefits that the SB1003EJ brings, ensuring efficient operation and long-term durability for their projects. Experience the difference with Onsemi's innovative technology and enhance your designs with the SB1003EJ today.

Feature Benefit Bullets

Config: SINGLE

Having a single configuration simplifies the design and integration process, making the product easier to use and maintain.

Surface Mount: YES

Being surface mountable allows for easy installation on PCBs, saving space and enabling efficient manufacturing processes.

Maximum Reverse Recovery Time: 0.01 us

With a very low reverse recovery time, this diode ensures fast and efficient switching, improving overall system performance.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this diode suitable for a wide range of applications, ensuring reliability in various environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop results in minimal power loss and heat generation, leading to greater efficiency in the circuit.

Maximum Output Current: 1 A

With a high output current capability, this diode can handle higher loads, making it suitable for a wide range of power applications.

Technology: SCHOTTKY

Schottky diodes are known for their low forward voltage drop and fast switching speeds, making this product ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating provides protection against voltage spikes and surges, increasing the overall reliability of the circuit.

Maximum Non Repetitive Peak Forward Current: 5 A

With a high peak forward current rating, this diode can safely handle short-term overloads, ensuring system reliability under varying operating conditions.

Technical Specifications

Diodes & Rectifiers SB1003EJ attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB1003EJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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