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SB10015M-TL-W

Onsemi

SB10015M-TL-W by Onsemi

The Onsemi SB10015M-TL-W is a Schottky rectifier diode with a max forward voltage of 0.48V and output current of 1A. With a fast reverse recovery time of 0.01us, it operates at temperatures up to 150°C making it ideal for high-speed switching applications in electronics.

Median Price

$0.138

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

$0.149

1k+ parts

$0.124

10k+ parts

$0.111

27,000

-

$0.149

$0.124

$0.111

DigiKey

USA . 27,000 parts In-Stock

1+ parts

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$0.130

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$0.130

Verical

USA . 27,000 parts In-Stock

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$0.138

27,000

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$0.138

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

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Digiode

USA . 2,434 parts In-Stock

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$0.116

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$0.116

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Vyrian

USA . 1,575 parts In-Stock

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$0.122

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1,575

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Flip Electronics

USA . 6,000 parts In-Stock

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Bristol Electronics

USA . 2,872 parts In-Stock

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2,872

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Dan-Mar Components

USA . 2,872 parts In-Stock

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2,872

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Distributors (Availability)

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Corphita

USA . 1,595 parts In-Stock

1+ parts

$0.110

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$0.110

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Corohmni

South Africa . 257 parts In-Stock

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$0.122

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257

$0.122

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Component Stockers USA

USA . 20,884 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

$0.110

20,884

$0.130

$0.120

$0.110

$0.110

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.190

100+ parts

$0.173

1k+ parts

$0.156

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100

$0.190

$0.173

$0.156

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Continental Prestige Electronics

USA . 27,000 parts In-Stock

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$0.112

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27,000

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$0.112

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QUARKTWIN TECHNOLOGY LTD

USA . 16,506 parts In-Stock

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TANS Electronics

Latvia . 7,651 parts In-Stock

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Problanco Electronics

Mexico . 7,057 parts In-Stock

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SupplyDigital Components

Austria . 5,912 parts In-Stock

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Kepictronics

USA . 2,751 parts In-Stock

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Metaverse IC Inc.

Canada . 2,751 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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Kulean Microsystems

USA . 1,114 parts In-Stock

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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344

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Overview

Experience the superior quality and reliability of Onsemi with the SB10015M-TL-W diode rectifier. Designed for efficiency and performance, this SCHOTTKY technology diode offers a maximum output current of 1A and a maximum repetitive peak reverse voltage of 15V. Perfect for a variety of applications, this surface-mount diode is ideal for power supply units, battery chargers, and voltage regulation circuits. Trust in Onsemi's reputation for excellence and upgrade your electronic devices with the SB10015M-TL-W for unmatched value and benefits.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product easy to install and use.

Surface Mount: YES

Surface mount feature enables easy PCB integration and saves space on the board.

Maximum Reverse Recovery Time: 0.01 us

The ultra-fast reverse recovery time ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can handle demanding applications without overheating.

Terminal Finish: TIN BISMUTH

The Tin Bismuth terminal finish provides good solderability and helps in reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

This specifies the maximum time for peak reflow temperature, ensuring proper soldering and component integrity.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the diode can withstand the soldering process without damage.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC with low forward voltage drop.

Maximum Forward Voltage (VF): 0.48 V

Low forward voltage helps in minimizing power loss and increasing efficiency.

Maximum Output Current: 1 A

Capable of handling a maximum output current of 1A, making it suitable for various low to medium power applications.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

A high repetitive peak reverse voltage rating ensures the diode's durability and reliability in repetitive voltage spikes.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of handling high non-repetitive peak forward current, making it reliable for transient events.

Diode Element Material: SILICON

Silicon material offers good thermal stability and electrical performance for the diode.

Technical Specifications

Diodes & Rectifiers SB10015M-TL-W attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.48 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SB10015M-TL-W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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