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SB10015M-TL-E

Onsemi

SB10015M-TL-E by Onsemi

SB10015M-TL-E by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.48V. With a reverse recovery time of 0.01us, it operates at temperatures up to 150 °C. Ideal for applications requiring fast switching and low power loss in surface mount configurations.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,775 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

17,775

-

$0.119

$0.099

$0.088

DigiKey

USA . 17,775 parts In-Stock

1+ parts

-

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$0.150

17,775

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$0.150

Verical

USA . 12,000 parts In-Stock

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$0.110

12,000

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$0.110

Distributors (In-Stock)

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Digiode

USA . 2,145 parts In-Stock

1+ parts

$0.093

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2,145

$0.093

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Vyrian

USA . 1,123 parts In-Stock

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$0.098

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$0.098

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DigiKey Marketplace

USA . 17,775 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 15,881 parts In-Stock

1+ parts

$0.083

100+ parts

-

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15,881

$0.083

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Corphita

USA . 2,249 parts In-Stock

1+ parts

$0.088

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2,249

$0.088

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Corohmni

South Africa . 243 parts In-Stock

1+ parts

$0.098

100+ parts

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243

$0.098

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Continental Prestige Electronics

USA . 17,775 parts In-Stock

1+ parts

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$0.094

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17,775

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$0.094

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QUARKTWIN TECHNOLOGY LTD

USA . 10,703 parts In-Stock

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Problanco Electronics

Mexico . 8,140 parts In-Stock

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SupplyDigital Components

Austria . 5,390 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Metaverse IC Inc.

Canada . 2,569 parts In-Stock

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Kepictronics

USA . 2,539 parts In-Stock

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2,539

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TANS Electronics

Latvia . 2,490 parts In-Stock

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2,490

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Kulean Microsystems

USA . 1,105 parts In-Stock

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UHIMA Technologies

Türkiye . 132 parts In-Stock

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Overview

Elevate your electronic designs with the SB10015M-TL-E from Onsemi, a leading manufacturer in the industry. This SCHOTTKY RECTIFIER DIODE offers unparalleled quality and reliability for your diode and rectifier needs. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 15V, this diode is perfect for a wide range of applications. Whether you're working on power supplies, inverters, or battery chargers, the SB10015M-TL-E delivers exceptional performance and efficiency. Trust Onsemi to provide the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes this diode easy to install and use in various applications.

Surface Mount: YES

Surface mount capability provides flexibility in mounting options, making it suitable for compact electronic devices.

Maximum Reverse Recovery Time: 0.01 us

With a fast reverse recovery time of 0.01us, this diode efficiently switches from conducting to non-conducting state, reducing power loss.

Maximum Operating Temperature: 150 °C

Operates effectively at high temperatures, ensuring reliability in demanding environments.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides good solderability and enhances the overall reliability of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds, allowing for proper soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperature of 260 °C, ensuring robust performance during soldering process.

Diode Type: RECTIFIER DIODE

Rectifier diode type is well-suited for converting AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.48 V

Low forward voltage drop of 0.48V minimizes power loss and enhances efficiency in circuit operation.

Maximum Output Current: 1 A

Capable of handling output current of up to 1A, making it suitable for moderate power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speed, enhancing overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 15 V

With a high repetitive peak reverse voltage of 15V, the diode can safely handle reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of withstanding non-repetitive peak forward current of 10A, making it suitable for applications with occasional high current surges.

Diode Element Material: SILICON

Silicon diode element material provides good electrical properties and high reliability for optimal performance.

Technical Specifications

Diodes & Rectifiers SB10015M-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.48 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SB10015M-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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