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SB10-04A3-BT

Onsemi

SB10-04A3-BT by Onsemi

SB10-04A3-BT by Onsemi is a Schottky rectifier diode with max output current of 1A and VF of 0.55V. It has reverse test voltage of 40V, ideal for applications requiring low forward voltage drop and high efficiency. Suitable for circuits needing fast switching speed and low power loss in round package shape.

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.124

1k+ parts

$0.103

10k+ parts

$0.092

48,000

-

$0.124

$0.103

$0.092

DigiKey

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

48,000

-

-

-

$0.160

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.115

39,000

-

-

-

$0.115

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 249 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

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249

$0.097

-

-

-

Vyrian

USA . 172 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

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172

$0.102

-

-

-

DigiKey Marketplace

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

48,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,156 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

2,156

$0.092

-

-

-

Component Stockers USA

USA . 45,699 parts In-Stock

1+ parts

$0.100

100+ parts

$0.100

1k+ parts

$0.090

10k+ parts

$0.090

45,699

$0.100

$0.100

$0.090

$0.090

Corohmni

South Africa . 465 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

-

465

$0.102

-

-

-

Continental Prestige Electronics

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.085

10k+ parts

-

48,000

-

-

$0.085

-

QUARKTWIN TECHNOLOGY LTD

USA . 15,284 parts In-Stock

1+ parts

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100+ parts

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15,284

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SupplyDigital Components

Austria . 5,341 parts In-Stock

1+ parts

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100+ parts

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5,341

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Problanco Electronics

Mexico . 1,702 parts In-Stock

1+ parts

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100+ parts

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1,702

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TANS Electronics

Latvia . 401 parts In-Stock

1+ parts

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401

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UHIMA Technologies

Türkiye . 368 parts In-Stock

1+ parts

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100+ parts

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368

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Kulean Microsystems

USA . 229 parts In-Stock

1+ parts

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229

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Overview

Enhance your electronic designs with the SB10-04A3-BT by Onsemi, a high-quality rectifier diode that offers reliable performance and efficiency. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications in various electronic devices. With a maximum output current of 1A and a maximum forward voltage of 0.55V, this Schottky technology diode provides superior functionality and precision. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations. Elevate your projects with the SB10-04A3-BT and experience the difference in quality and performance.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and reduces component count, making this product a reliable and cost-effective choice.

Maximum Reverse Current: 800 uA

Low reverse current ensures minimal power loss and high efficiency in the application.

Package Shape: ROUND

Round package shape provides easy mounting and handling in various applications.

Reverse Test Voltage: 40 V

High reverse test voltage ensures robust performance and protection against reverse voltage spikes.

No. of Terminals: 2

Having only 2 terminals simplifies circuit connection and reduces chances of error during installation.

Package Style (Meter): LONG FORM

Long form package style provides sufficient space for heat dissipation and helps in maintaining lower operating temperatures.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish ensures good solderability and reliability in various operating conditions.

Terminal Position: AXIAL

Axial terminal position makes it easy to insert and solder the diode in the circuit, providing a secure connection.

Case Connection: ISOLATED

Isolated case connection helps in preventing electrical shorting and improves safety in the application.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop (0.55V) ensures minimal power loss and high efficiency in the forward bias mode.

Maximum Output Current: 1 A

High maximum output current rating (1A) allows for handling higher load currents, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low forward voltage drop, making it ideal for high-frequency applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in circuit design and easy connection to other components.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum repetitive peak reverse voltage rating (40V) ensures durability and reliability in repetitive reverse voltage applications.

Maximum Non Repetitive Peak Forward Current: 30 A

High maximum non-repetitive peak forward current rating (30A) allows for handling short-term high current surges, ensuring reliability in the application.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and high temperature tolerance, ensuring long-term reliability in various operating conditions.

Technical Specifications

Diodes & Rectifiers SB10-04A3-BT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e6

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Reverse Test Voltage:

40 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Position:

Trade Compliance

SB10-04A3-BT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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