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SB10-03A2-BT

Onsemi

SB10-03A2-BT by Onsemi

SB10-03A2-BT by Onsemi is a single Schottky rectifier diode with a max forward voltage of 0.55V and output current of 1A. It has a fast reverse recovery time of 0.03us, making it suitable for applications requiring high-speed switching such as power supplies and voltage regulators. The diode operates at a max temperature of 125 °C and has a max repetitive peak reverse voltage of 30V.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 136 parts In-Stock

1+ parts

$0.183

100+ parts

$0.167

1k+ parts

$0.150

10k+ parts

-

136

$0.183

$0.167

$0.150

-

Rochester

USA . 108,000 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

108,000

-

$0.251

$0.208

$0.186

DigiKey

USA . 108,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.310

10k+ parts

-

108,000

-

-

$0.310

-

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.232

84,000

-

-

-

$0.232

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,738 parts In-Stock

1+ parts

$0.174

100+ parts

-

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-

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1,738

$0.174

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-

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Vyrian

USA . 1,776 parts In-Stock

1+ parts

$0.183

100+ parts

-

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10k+ parts

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1,776

$0.183

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 347 parts In-Stock

1+ parts

$0.165

100+ parts

-

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-

10k+ parts

-

347

$0.165

-

-

-

Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.183

100+ parts

-

1k+ parts

-

10k+ parts

-

309

$0.183

-

-

-

Advanced Electronics

New Zealand . 136 parts In-Stock

1+ parts

$0.183

100+ parts

$0.167

1k+ parts

$0.150

10k+ parts

-

136

$0.183

$0.167

$0.150

-

Continental Prestige Electronics

USA . 108,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.198

10k+ parts

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108,000

-

-

$0.198

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QUARKTWIN TECHNOLOGY LTD

USA . 12,661 parts In-Stock

1+ parts

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12,661

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TANS Electronics

Latvia . 7,600 parts In-Stock

1+ parts

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7,600

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Kulean Microsystems

USA . 2,767 parts In-Stock

1+ parts

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2,767

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UHIMA Technologies

Türkiye . 903 parts In-Stock

1+ parts

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903

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SupplyDigital Components

Austria . 697 parts In-Stock

1+ parts

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697

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Problanco Electronics

Mexico . 386 parts In-Stock

1+ parts

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386

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Overview

Experience the superior quality and performance of the SB10-03A2-BT diode by Onsemi. This diode, designed with cutting-edge Schottky technology, offers fast and efficient operation with a maximum forward voltage of only 0.55V. Ideal for a wide range of applications, this rectifier diode delivers reliable results in a compact package. Trust Onsemi's reputation for excellence and innovation, and upgrade your electronics with the SB10-03A2-BT today. Unlock the benefits of faster response times, lower power consumption, and increased reliability for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring reliable performance.

Maximum Reverse Recovery Time: 0.03 us

Fast reverse recovery time allows for efficient switching and prevents energy loss.

Package Shape: ROUND

Round shape makes it easy to mount and fit into various circuit designs.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable operation in various environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making it suitable for various power supply applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching capability, making it efficient for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring voltage rectification up to 30V.

Technical Specifications

Diodes & Rectifiers SB10-03A2-BT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

SB10-03A2-BT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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