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SB10-015P

Onsemi

SB10-015P by Onsemi

The Onsemi SB10-015P is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 1A. It has a max reverse voltage of 15V, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package with surface mount capability makes it ideal for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 174 parts In-Stock

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Digiode

USA . 150 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.077

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$0.076

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$0.073

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Kepictronics

USA . 306,000 parts In-Stock

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TANS Electronics

Latvia . 5,484 parts In-Stock

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Problanco Electronics

Mexico . 4,495 parts In-Stock

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Kulean Microsystems

USA . 4,199 parts In-Stock

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SupplyDigital Components

Austria . 3,673 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 629 parts In-Stock

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Corohmni

South Africa . 431 parts In-Stock

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UHIMA Technologies

Türkiye . 409 parts In-Stock

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Overview

Upgrade your electronics with the SB10-015P by Onsemi, a top-quality rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. Its Schottky technology ensures efficient power conversion, while its small outline package makes it easy to install. With a maximum forward voltage of 0.55V and output current of 1A, this diode provides excellent value and benefits to customers looking for high-quality components. Trust Onsemi for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplified design with only one diode, suitable for basic rectification purposes.

Surface Mount: YES

Ease of installation on a circuit board, saving space and facilitating mass production.

No. of Terminals: 3

Allows for easy connection to external components, reducing wiring complexity.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop leads to higher efficiency and reduced power losses.

Maximum Output Current: 1 A

Capable of handling moderate current levels, suitable for various applications.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower reverse leakage compared to standard diodes.

Maximum Repetitive Peak Reverse Voltage: 15 V

Can withstand relatively high reverse voltages, making it versatile in different circuit configurations.

Diode Element Material: SILICON

Silicon diodes are widely used and reliable, ensuring consistent performance over time.

Technical Specifications

Diodes & Rectifiers SB10-015P attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

8 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB10-015P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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