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SB10-03A2

Onsemi

SB10-03A2 by Onsemi

SB10-03A2 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 1A. Its fast reverse recovery time of 0.03us makes it suitable for high-speed applications in electronics, such as power supplies and voltage regulators. The diode's isolated case connection and axial terminal position enhance its performance in various circuit designs.

Median Price

$0.184

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 10 parts In-Stock

1+ parts

$0.136

100+ parts

$0.124

1k+ parts

$0.112

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10

$0.136

$0.124

$0.112

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DigiKey

USA . 9,031 parts In-Stock

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$0.310

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9,031

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$0.310

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Rochester

USA . 7,000 parts In-Stock

1+ parts

-

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$0.132

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$0.110

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$0.098

7,000

-

$0.132

$0.110

$0.098

Verical

USA . 6,690 parts In-Stock

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$0.232

6,690

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$0.232

Distributors (In-Stock)

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Digiode

USA . 681 parts In-Stock

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$0.103

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Vyrian

USA . 1,280 parts In-Stock

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$0.110

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DigiKey Marketplace

USA . 9,031 parts In-Stock

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9,031

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Distributors (Availability)

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Corphita

USA . 728 parts In-Stock

1+ parts

$0.097

100+ parts

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728

$0.097

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Corohmni

South Africa . 234 parts In-Stock

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$0.108

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234

$0.108

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.136

100+ parts

$0.124

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$0.112

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10

$0.136

$0.124

$0.112

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QUARKTWIN TECHNOLOGY LTD

USA . 12,709 parts In-Stock

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Continental Prestige Electronics

USA . 9,031 parts In-Stock

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$0.198

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9,031

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TANS Electronics

Latvia . 8,051 parts In-Stock

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Problanco Electronics

Mexico . 7,256 parts In-Stock

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SupplyDigital Components

Austria . 6,950 parts In-Stock

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Kulean Microsystems

USA . 6,905 parts In-Stock

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Perfect Parts

USA . 431 parts In-Stock

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UHIMA Technologies

Türkiye . 147 parts In-Stock

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Overview

Discover the SB10-03A2 by Onsemi, a high-quality rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. From power supplies to battery chargers, this product is designed to deliver efficiency and precision. With a maximum output current of 1A and a maximum forward voltage of 0.55V, the SB10-03A2 provides value and benefits that customers can rely on. Upgrade your electronics with the SB10-03A2 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diode, increasing its durability and reliability.

Maximum Reverse Recovery Time: 0.03 us

Fast reverse recovery time ensures efficient operation and low power loss in high-speed switching applications.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode is suitable for low to medium power applications.

Technology: SCHOTTKY

Schottky technology offers lower forward voltage drop compared to standard diodes, resulting in higher efficiency and lower heat dissipation.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum reverse voltage of 30 V, this diode is ideal for low voltage circuits and applications.

Diode Element Material: SILICON

Silicon diodes are known for their high conductivity and reliability, making them a popular choice for various electronic devices.

Technical Specifications

Diodes & Rectifiers SB10-03A2 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

SB10-03A2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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