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SB10-03A2-AT1

Onsemi

SB10-03A2-AT1 by Onsemi

SB10-03A2-AT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 1A. It has a fast reverse recovery time of 0.03us, making it suitable for applications requiring high-speed switching in electronic circuits. The diode's package style is long form, with an operating temperature up to 125 °C, ideal for various power supply designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,761 parts In-Stock

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Vyrian

USA . 914 parts In-Stock

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Component Stockers USA

USA . 558 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,107 parts In-Stock

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Problanco Electronics

Mexico . 6,275 parts In-Stock

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SupplyDigital Components

Austria . 6,205 parts In-Stock

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TANS Electronics

Latvia . 4,399 parts In-Stock

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Kulean Microsystems

USA . 4,342 parts In-Stock

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Corphita

USA . 1,658 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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Overview

Unleash the power of technology with the SB10-03A2-AT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are designed for maximum performance and efficiency. Whether you're working on consumer electronics, automotive applications, or industrial equipment, this product offers unparalleled value with its fast reverse recovery time, low forward voltage, and high output current capabilities. Trust Onsemi to provide reliable solutions that meet your needs and exceed your expectations. Elevate your projects with the SB10-03A2-AT1 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode durable and resistant to environmental factors, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.03 us

The low reverse recovery time ensures fast and efficient switching, making this diode suitable for high-frequency applications.

Package Shape: ROUND

The round package shape allows for easy installation and soldering onto circuit boards, making it convenient for assembly.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high temperatures without compromising its performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert alternating current (AC) to direct current (DC), making it ideal for various power supply applications.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching speed, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this diode is suitable for low to medium voltage applications, offering protection against reverse currents.

Technical Specifications

Diodes & Rectifiers SB10-03A2-AT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB10-03A2-AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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