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SB10-04A3-AT1

Onsemi

SB10-04A3-AT1 by Onsemi

SB10-04A3-AT1 by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.55V. It has a reverse test voltage of 40V, making it suitable for applications requiring low power consumption and high efficiency. With an isolated case connection and axial terminal position, it is ideal for use in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,359 parts In-Stock

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Digiode

USA . 1,532 parts In-Stock

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TANS Electronics

Latvia . 4,138 parts In-Stock

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Problanco Electronics

Mexico . 3,726 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,722 parts In-Stock

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Corphita

USA . 2,375 parts In-Stock

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SupplyDigital Components

Austria . 2,079 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

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Kulean Microsystems

USA . 19 parts In-Stock

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Overview

Experience the power of innovation with the SB10-04A3-AT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers designed for optimal performance. This product offers customers reliable and efficient solutions for various applications. With its Schottky technology and maximum output current of 1A, the SB10-04A3-AT1 ensures superior functionality at a competitive price point. Trust Onsemi to provide you with the best-in-class products that exceed your expectations. Elevate your projects with the SB10-04A3-AT1 and experience the difference today!

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to integrate into circuits and reduces complexity.

Maximum Reverse Current: 800 uA

Low reverse current ensures efficient performance and minimal power loss.

Package Shape: ROUND

Round package shape allows for easy mounting and soldering.

Reverse Test Voltage: 40 V

High reverse test voltage provides durability and protection against voltage spikes.

No. of Terminals: 2

Having only 2 terminals simplifies the connections required for the diode.

Package Style (Meter): LONG FORM

Long form package style provides stability and protection for the diode.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/bismuth terminal finish ensures good solderability and reliability.

Terminal Position: AXIAL

Axial terminal position facilitates easy installation and connection.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents short circuits.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop helps in reducing power dissipation and improving efficiency.

Maximum Output Current: 1 A

High output current capability ensures compatibility with a wide range of applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connections.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures reliability and long-term performance.

Maximum Non Repetitive Peak Forward Current: 30 A

High non-repetitive peak forward current handling capability allows for reliable operation under surge conditions.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and reliability.

Technical Specifications

Diodes & Rectifiers SB10-04A3-AT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e6

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

1 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Reverse Test Voltage:

40 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Position:

Trade Compliance

SB10-04A3-AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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