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NTSB60100CTG

Onsemi

NTSB60100CTG by Onsemi

NTSB60100CTG by Onsemi is a Schottky rectifier diode with common cathode configuration and 2 elements. It has a max output current of 30A, forward voltage of 0.84V, and repetitive peak reverse voltage of 100V. Ideal for applications requiring high efficiency, it operates b/w -40 to 150 °C temperature range.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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AZTECH Wire

Italy . 398 parts In-Stock

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TANS Electronics

Latvia . 6,972 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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Overview

Unlock the power of efficiency with the NTSB60100CTG by Onsemi. This top-of-the-line diode & rectifier boasts superior quality and reliability, thanks to the renowned manufacturer Onsemi. Ideal for a wide range of applications, this product offers customers unbeatable value with its high performance and cutting-edge technology. Experience the benefits of seamless operation and maximum output current of 30A, making it the perfect choice for your next project. Elevate your efficiency with the NTSB60100CTG today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, ensuring their durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and 2 elements provide redundancy and reliability.

Surface Mount: YES

Surface mount design makes it easy to assemble and integrate into electronic devices.

Maximum Reverse Current: 1000 uA

Low maximum reverse current helps in minimizing power loss and improving efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a wide range of environments.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed, making them ideal for high efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage ensures that the diode can handle high voltage spikes without damage.

Technical Specifications

Diodes & Rectifiers NTSB60100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB60100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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