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NSV60600MZ4T1G

Onsemi

NSV60600MZ4T1G by Onsemi

NSV60600MZ4T1G by Onsemi is a PNP BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it meets AEC-Q101 standards for automotive use.

Median Price

$0.403

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 19 parts In-Stock

1+ parts

$0.380

100+ parts

$0.278

1k+ parts

$0.187

10k+ parts

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19

$0.380

$0.278

$0.187

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DigiKey

USA . 949 parts In-Stock

1+ parts

$1.060

100+ parts

$0.430

1k+ parts

$0.332

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949

$1.060

$0.430

$0.332

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Mouser Electronics

USA . 204 parts In-Stock

1+ parts

$1.120

100+ parts

$0.452

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$0.312

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204

$1.120

$0.452

$0.312

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Rochester

USA . 6,000 parts In-Stock

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-

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$0.271

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$0.225

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$0.200

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-

$0.271

$0.225

$0.200

Chip1Stop

Japan . 28 parts In-Stock

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Verical

USA . 28 parts In-Stock

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$0.403

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$0.278

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$0.219

28

-

$0.403

$0.278

$0.219

Distributors (In-Stock)

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Digiode

USA . 222 parts In-Stock

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$0.211

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222

$0.211

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Nova Conductors

Japan . 87 parts In-Stock

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$0.341

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$0.341

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Flip Electronics

USA . 455,923 parts In-Stock

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455,923

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Bristol Electronics

USA . 100,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 82,808 parts In-Stock

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Chip Stock

USA . 34,500 parts In-Stock

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Vyrian

USA . 8,530 parts In-Stock

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Sensible Micro Corp

USA . 2,363 parts In-Stock

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2,363

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Distributors (Availability)

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Ampacity Inc.

Singapore . 8,720 parts In-Stock

1+ parts

$0.156

100+ parts

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8,720

$0.156

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Semicontronic

India . 8,314 parts In-Stock

1+ parts

$0.156

100+ parts

$0.152

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$0.151

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8,314

$0.156

$0.152

$0.151

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Corohmni

South Africa . 112 parts In-Stock

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$0.183

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112

$0.183

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Corphita

USA . 425 parts In-Stock

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$0.200

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425

$0.200

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Argo Parts USA

USA . 2,804 parts In-Stock

1+ parts

$0.341

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10k+ parts

$0.331

2,804

$0.341

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$0.331

Aztec Data Supply Inc.

USA . 1,853 parts In-Stock

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$1.210

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1,853

$1.210

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Perfect Parts

USA . 2,102,946 parts In-Stock

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Infinite Electronics LLP (Excess)

. 105,013 parts In-Stock

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GreenTree Electronics

Israel . 71,050 parts In-Stock

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ChipstoGo Electronic ltd

UK . 30,000 parts In-Stock

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Epart123

USA . 30,000 parts In-Stock

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$0.220

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$0.220

Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Lixinc

USA . 13,193 parts In-Stock

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Continental Prestige Electronics

USA . 7,000 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 5,641 parts In-Stock

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TANS Electronics

Latvia . 4,497 parts In-Stock

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Problanco Electronics

Mexico . 3,413 parts In-Stock

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Kulean Microsystems

USA . 767 parts In-Stock

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iodParts Technologies Inc.

India . 646 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.334

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$0.324

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$0.317

50

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$0.334

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$0.317

Overview

Discover the cutting-edge technology of the NSV60600MZ4T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that guarantees exceptional performance in switching applications. With Onsemi's reputation for reliability and innovation, this PNP transistor offers customers unmatched value and benefits. Its sleek design, compact package style, and maximum power dissipation of 2W make it an ideal choice for a wide range of electronic devices. Upgrade your projects with the NSV60600MZ4T1G and experience superior efficiency and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and easier implementation in various electronic systems.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast turn-on and turn-off times.

Surface Mount: YES

Suitable for automated assembly processes, saving time and cost in production.

Maximum Power Dissipation: 2 W

Can handle moderate power levels, making it suitable for a range of applications.

Maximum Collector-Emitter Voltage: 60 V

Allows for operation in circuits with higher voltages, expanding its usability.

Maximum Collector Current: 6 A

Capable of handling higher currents, suitable for power applications.

Nominal Transition Frequency: 100 MHz

Provides high-frequency operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60600MZ4T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

685 ns

Maximum Turn On Time (ton):

280 ns

Trade Compliance

NSV60600MZ4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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