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NSV60601MZ4T3G

Onsemi

NSV60601MZ4T3G by Onsemi

NSV60601MZ4T3G by Onsemi is a NPN BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can handle up to 2W power dissipation.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,067 parts In-Stock

1+ parts

$0.164

100+ parts

$0.108

1k+ parts

$0.107

10k+ parts

-

2,067

$0.164

$0.108

$0.107

-

DigiKey

USA . 3,479 parts In-Stock

1+ parts

$0.990

100+ parts

$0.404

1k+ parts

$0.281

10k+ parts

$0.217

3,479

$0.990

$0.404

$0.281

$0.217

Mouser Electronics

USA . 3,140 parts In-Stock

1+ parts

$1.110

100+ parts

$0.449

1k+ parts

-

10k+ parts

-

3,140

$1.110

$0.449

-

-

Rochester

USA . 47,865 parts In-Stock

1+ parts

-

100+ parts

$0.270

1k+ parts

$0.224

10k+ parts

$0.199

47,865

-

$0.270

$0.224

$0.199

Verical

USA . 40,000 parts In-Stock

1+ parts

-

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$0.249

40,000

-

-

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$0.249

Avnet

USA . 4,000 parts In-Stock

1+ parts

-

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4,000

-

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Chip1Stop

Japan . 2,377 parts In-Stock

1+ parts

-

100+ parts

$0.244

1k+ parts

$0.203

10k+ parts

-

2,377

-

$0.244

$0.203

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 880 parts In-Stock

1+ parts

$0.193

100+ parts

-

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-

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880

$0.193

-

-

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Digiode

USA . 2,140 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

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2,140

$0.209

-

-

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Chip Stock

USA . 243,166 parts In-Stock

1+ parts

-

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243,166

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.480

12,000

-

-

-

$0.480

Flip Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

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-

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Cyclops Electronics Ltd

UK . 2,237 parts In-Stock

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2,237

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Distributors (Availability)

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Corohmni

South Africa . 53 parts In-Stock

1+ parts

$0.193

100+ parts

-

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53

$0.193

-

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Corphita

USA . 2,401 parts In-Stock

1+ parts

$0.198

100+ parts

-

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2,401

$0.198

-

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Component Stockers USA

USA . 12,045 parts In-Stock

1+ parts

$0.220

100+ parts

$0.200

1k+ parts

$0.200

10k+ parts

$0.190

12,045

$0.220

$0.200

$0.200

$0.190

Perfect Parts

USA . 553,728 parts In-Stock

1+ parts

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553,728

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Infinite Electronics LLP (Excess)

. 400,008 parts In-Stock

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400,008

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RC Electronics

USA . 65,000 parts In-Stock

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65,000

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Problanco Electronics

Mexico . 7,053 parts In-Stock

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7,053

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TANS Electronics

Latvia . 4,016 parts In-Stock

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4,016

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iodParts Technologies Inc.

India . 1,723 parts In-Stock

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1,723

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SupplyDigital Components

Austria . 692 parts In-Stock

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692

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Kepictronics

USA . 306 parts In-Stock

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306

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Futuretech Components

Singapore . 220 parts In-Stock

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220

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UHIMA Technologies

Türkiye . 198 parts In-Stock

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198

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Kulean Microsystems

USA . 144 parts In-Stock

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144

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Overview

Unleash the power of innovation with the NSV60601MZ4T3G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for various switching applications. With its NPN configuration and maximum collector-emitter voltage of 60V, this transistor offers unparalleled performance and reliability. Whether you're looking to optimize your circuit design or enhance your electronic projects, the NSV60601MZ4T3G provides the value, benefits, and advantages that customers need to take their creations to the next level. Elevate your technology game with Onsemi's exceptional product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material in the package body provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and enabling high-density designs.

Package Shape: RECTANGULAR

Rectangular package shape offers convenience for mounting and placement on the PCB, enhancing ease of use in electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form provides reliable soldering connections and ensures secure attachment to the PCB, reducing the risk of disconnection.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in circuit connections and can be easily integrated into various electronic designs.

Maximum Power Dissipation (Abs): 2 W

High maximum power dissipation rating of 2W ensures robust performance and reliability, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact circuit designs, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 50

Minimum DC current gain of 50 ensures stable and consistent amplification in electronic circuits, providing reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures the transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating of 60V allows for safe operation in various voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high performance and reliability, making it suitable for demanding electronic applications.

Maximum Turn On Time (ton): 200 ns

Fast maximum turn-on time of 200ns ensures quick response in switching applications, enhancing efficiency in electronic circuits.

Maximum Collector Current (IC): 6 A

High maximum collector current rating of 6A allows for handling high currents, making it suitable for power applications.

Maximum Turn Off Time (toff): 1475 ns

Maximum turn-off time of 1475ns ensures quick switching off, preventing overlap in switching operations and maintaining signal integrity.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and corrosion resistance, ensuring reliable connections in electronic circuits.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections, allowing for various mounting orientations in electronic designs.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and enhances thermal management, improving overall performance of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30s ensures safe soldering during manufacturing process without damaging the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C allows for reliable and efficient soldering during the assembly process, ensuring stable connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive electronic applications, making it a trusted choice for automotive designs.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100MHz indicates excellent high-frequency performance, making it suitable for high-speed applications and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60601MZ4T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1475 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

NSV60601MZ4T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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