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NSV60101DMTWTBG

Onsemi

NSV60101DMTWTBG by Onsemi

NSV60101DMTWTBG by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 35, and IC of 1A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 60V. This small outline package has dual terminals and matte tin finish, meeting AEC-Q101 standards.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,580 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.300

10k+ parts

-

1,580

$1.060

$0.431

$0.300

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Mouser Electronics

USA . 164 parts In-Stock

1+ parts

$1.120

100+ parts

$0.453

1k+ parts

$0.301

10k+ parts

$0.244

164

$1.120

$0.453

$0.301

$0.244

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,365 parts In-Stock

1+ parts

$0.580

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-

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1,365

$0.580

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Flip Electronics

USA . 174,000 parts In-Stock

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174,000

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 7,575 parts In-Stock

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7,575

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Bristol Electronics

USA . 1,314 parts In-Stock

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1,314

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Atlantic Semiconductor

USA . 1,314 parts In-Stock

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1,314

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Distributors (Availability)

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Corphita

USA . 448 parts In-Stock

1+ parts

$0.549

100+ parts

-

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448

$0.549

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Component Stockers USA

USA . 5,839 parts In-Stock

1+ parts

$0.600

100+ parts

$0.360

1k+ parts

$0.250

10k+ parts

-

5,839

$0.600

$0.360

$0.250

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Corohmni

South Africa . 241 parts In-Stock

1+ parts

$0.610

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241

$0.610

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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13,440

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 4,596 parts In-Stock

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4,596

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Problanco Electronics

Mexico . 3,855 parts In-Stock

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3,855

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Kulean Microsystems

USA . 3,842 parts In-Stock

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3,842

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TANS Electronics

Latvia . 1,243 parts In-Stock

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1,243

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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242

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Overview

Unleash the power of innovation with the NSV60101DMTWTBG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) that offer unparalleled performance and reliability. Ideal for switching applications, this NPN transistor boasts a low VCEsat of 0.2V, ensuring efficient operation. With a durable plastic/epoxy package body material and compact square shape, this transistor is designed to withstand the toughest conditions. Trust Onsemi to provide cutting-edge technology that exceeds expectations. Elevate your projects with the NSV60101DMTWTBG and experience the difference today.

Feature Benefit Bullets

Diameter (Lead): 0.6 mm

Thin lead diameter allows for easy soldering and connection, making installation more convenient.

Technology: THIN FILM

Thin film technology ensures high precision and stability in resistance values, leading to accurate performance.

Resistance: 3740 ohm

With a specific resistance value, this resistor can be used in various circuit applications for specific requirements.

Maximum Operating Temperature: 155 °C

High maximum operating temperature allows for usage in environments with elevated temperatures without compromising performance.

Tolerance: 0.1 %

A low tolerance level of 0.1% ensures that the resistor's actual resistance value closely matches the stated value, providing precise results.

Rated Power Dissipation (P): 0.25 W

The rated power dissipation of 0.25W allows the resistor to handle higher power loads without overheating, ensuring reliable operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60101DMTWTBG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2.27 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

NSV60101DMTWTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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