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NSV60601MZ4T1G

Onsemi

NSV60601MZ4T1G by Onsemi

NSV60601MZ4T1G by Onsemi is a NPN BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.

Median Price

$0.296

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,085 parts In-Stock

1+ parts

$1.020

100+ parts

$0.414

1k+ parts

$0.319

10k+ parts

-

5,085

$1.020

$0.414

$0.319

-

Mouser Electronics

USA . 17,587 parts In-Stock

1+ parts

$1.050

100+ parts

$0.427

1k+ parts

$0.280

10k+ parts

-

17,587

$1.050

$0.427

$0.280

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Rochester

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

$0.268

1k+ parts

$0.222

10k+ parts

$0.198

14,000

-

$0.268

$0.222

$0.198

DigiKey

USA . 8,844 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.280

10k+ parts

$0.255

8,844

-

-

$0.280

$0.255

Farnell

UK . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.292

1k+ parts

$0.256

10k+ parts

$0.239

2,330

-

$0.292

$0.256

$0.239

Element14

Singapore . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.240

10k+ parts

-

2,330

-

$0.300

$0.240

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.299

100+ parts

-

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-

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650

$0.299

-

-

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Digiode

USA . 2,230 parts In-Stock

1+ parts

$0.570

100+ parts

-

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-

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2,230

$0.570

-

-

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Ozdisan Elektronik

Türkiye . 40,541 parts In-Stock

1+ parts

$63.851

100+ parts

-

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-

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40,541

$63.851

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Flip Electronics

USA . 387,392 parts In-Stock

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387,392

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Chip Stock

USA . 157,052 parts In-Stock

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157,052

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Cyclops Electronics Ltd

UK . 145,671 parts In-Stock

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145,671

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Vyrian

USA . 58,267 parts In-Stock

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58,267

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Bristol Electronics

USA . 12,513 parts In-Stock

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12,513

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Infinite Electronics LLP

India . 6,905 parts In-Stock

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6,905

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.281

10k+ parts

$0.263

2,000

-

-

$0.281

$0.263

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 58,390 parts In-Stock

1+ parts

$0.248

100+ parts

-

1k+ parts

-

10k+ parts

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58,390

$0.248

-

-

-

Corohmni

South Africa . 427 parts In-Stock

1+ parts

$0.287

100+ parts

-

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-

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427

$0.287

-

-

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Argo Parts USA

USA . 2,341 parts In-Stock

1+ parts

$0.299

100+ parts

-

1k+ parts

-

10k+ parts

$0.290

2,341

$0.299

-

-

$0.290

Corphita

USA . 1,987 parts In-Stock

1+ parts

$0.540

100+ parts

-

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1,987

$0.540

-

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Aztec Data Supply Inc.

USA . 56 parts In-Stock

1+ parts

$1.550

100+ parts

-

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56

$1.550

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Kepictronics

USA . 78,760 parts In-Stock

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78,760

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RC Electronics

USA . 70,152 parts In-Stock

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70,152

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GreenTree Electronics

Israel . 44,448 parts In-Stock

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44,448

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ChipstoGo Electronic ltd

UK . 28,000 parts In-Stock

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Lixinc

USA . 15,662 parts In-Stock

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15,662

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 6,946 parts In-Stock

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6,946

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Kulean Microsystems

USA . 6,677 parts In-Stock

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6,677

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Problanco Electronics

Mexico . 6,666 parts In-Stock

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6,666

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Continental Prestige Electronics

USA . 2,550 parts In-Stock

1+ parts

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$0.182

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2,550

-

$0.182

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TANS Electronics

Latvia . 825 parts In-Stock

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825

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Futuretech Components

Singapore . 522 parts In-Stock

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522

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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356

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.293

1k+ parts

$0.284

10k+ parts

$0.278

50

-

$0.293

$0.284

$0.278

Overview

Experience the superior quality and reliability of Onsemi with the NSV60601MZ4T1G Small Signal Bipolar Junction Transistor. Perfect for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 6A. With a small outline package style and dual terminal position, this transistor provides high performance in a compact design. Trust Onsemi to deliver innovative solutions for your electronic needs. Discover the value and benefits that the NSV60601MZ4T1G can bring to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs, making it a versatile choice for various switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces the overall cost of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high reliability.

Surface Mount: YES

The surface mount capability allows for easy and space-efficient PCB mounting, making it ideal for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into different circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form offers secure soldering connections, ensuring reliability in various operating conditions.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in circuit connections and enables more complex circuit designs.

Maximum Power Dissipation (Abs): 2 W

The high maximum power dissipation of 2W allows for efficient operation under heavy loads, increasing overall performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 50

The high minimum DC current gain ensures stable and consistent amplification in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand extreme conditions without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60V allows for safe operation in high-voltage circuits.

Transistor Element Material: SILICON

The use of silicon material in the transistor element ensures high performance and reliability in a wide range of applications.

Maximum Turn On Time (ton): 200 ns

The fast turn-on time of 200ns improves the overall speed and efficiency of the switching operation.

Maximum Collector Current (IC): 6 A

With a high maximum collector current rating of 6A, this transistor can handle high current loads without overheating.

Maximum Turn Off Time (toff): 1475 ns

The fast turn-off time of 1475ns reduces switching losses and improves the efficiency of the circuit.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and simplifies the PCB layout.

Case Connection: COLLECTOR

The case connection at the collector provides easy access for heat dissipation, ensuring stable operation under high-power conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30s reduces the risk of thermal damage during the manufacturing process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without degradation.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 automotive industry standard, this transistor meets stringent quality and reliability requirements.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100MHz, this transistor offers excellent high-frequency performance for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60601MZ4T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1475 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

NSV60601MZ4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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