Loading...

NSV60201LT1G

Onsemi

NSV60201LT1G by Onsemi

NSV60201LT1G by Onsemi is a NPN BJT transistor with max. Vce of 60V, Ic of 2A, and fT of 100MHz. Ideal for switching applications due to fast ton of 155ns and toff of 1220ns. Features Gull Wing terminals in a small outline package shape.

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

-

14

$0.055

-

-

-

Mouser Electronics

USA . 161 parts In-Stock

1+ parts

$1.050

100+ parts

$0.461

1k+ parts

$0.211

10k+ parts

$0.187

161

$1.050

$0.461

$0.211

$0.187

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Verical

USA . 2,964 parts In-Stock

1+ parts

-

100+ parts

$0.116

1k+ parts

$0.102

10k+ parts

-

2,964

-

$0.116

$0.102

-

Chip1Stop

Japan . 2,964 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.108

10k+ parts

-

2,964

-

$0.132

$0.108

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,264 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

-

10k+ parts

-

1,264

$0.116

-

-

-

Digiode

USA . 1,040 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

-

10k+ parts

-

1,040

$0.155

-

-

-

Flip Electronics

USA . 130,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

130,000

-

-

-

-

Chip Stock

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

48,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 405 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

-

10k+ parts

-

405

$0.116

-

-

-

Corphita

USA . 1,549 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

-

1,549

$0.147

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

RC Electronics

USA . 15,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,300

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,387

-

-

-

-

Problanco Electronics

Mexico . 6,864 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,864

-

-

-

-

TANS Electronics

Latvia . 3,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,656

-

-

-

-

Kulean Microsystems

USA . 3,504 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,504

-

-

-

-

Perfect Parts

USA . 3,304 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,304

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.150

10k+ parts

-

3,000

-

-

$0.150

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

SupplyDigital Components

Austria . 804 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

804

-

-

-

-

UHIMA Technologies

Türkiye . 295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

295

-

-

-

-

Overview

Enhance your electronic designs with the NSV60201LT1G Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, Onsemi delivers top-notch quality and reliability in their products. Ideal for switching applications, this NPN transistor offers high performance and efficiency. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, this transistor ensures optimal functionality. Upgrade your projects with the NSV60201LT1G and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package is cost-effective and provides good insulation, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this transistor versatile for various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures easier integration into electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low ON-state resistance.

Surface Mount: YES

Surface mount packaging enables easy and compact PCB design, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of board space and facilitates proper orientation during assembly.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connections and are suitable for automated soldering processes.

No. of Terminals: 3

Three terminals provide standard connections for emitter, base, and collector, ensuring compatibility with many circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compact size and efficient thermal management, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable amplification characteristics and reliable performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage rating, this transistor can handle higher voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon-based transistor element provides good thermal stability and high reliability, ensuring long-term performance.

Maximum Turn On Time (ton): 155 ns

Fast turn-on time enables quick response in switching applications, reducing power losses and improving efficiency.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows the transistor to handle higher current loads, making it suitable for various power applications.

Maximum Turn Off Time (toff): 1220 ns

Slow turn-off time ensures minimal switching losses and reduces stress on the circuit components, improving overall efficiency.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and resistance to oxidation, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for easy mounting on the PCB and ensures proper alignment during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents overheating of the transistor during soldering, reducing the risk of damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for lead-free soldering processes, ensuring compliance with RoHS regulations.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates a transistor's ability for high-speed switching, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60201LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1220 ns

Maximum Turn On Time (ton):

155 ns

Trade Compliance

NSV60201LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8