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NSV60101DMR6T2G

Onsemi

NSV60101DMR6T2G by Onsemi

NSV60101DMR6T2G by Onsemi is a NPN BJT transistor with max VCEsat of 0.2V, hFE of 100, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 200MHz.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 18,000 parts In-Stock

1+ parts

-

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$0.080

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$0.080

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Rochester

USA . 3,000 parts In-Stock

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$0.142

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$0.118

10k+ parts

$0.105

3,000

-

$0.142

$0.118

$0.105

Verical

USA . 3,000 parts In-Stock

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$0.132

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$0.132

Distributors (In-Stock)

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Digiode

USA . 1,563 parts In-Stock

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$0.111

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$0.111

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Vyrian

USA . 1,749 parts In-Stock

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$0.117

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$0.117

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Flip Electronics

USA . 18,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,158 parts In-Stock

1+ parts

$0.105

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1,158

$0.105

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Corohmni

South Africa . 331 parts In-Stock

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$0.117

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331

$0.117

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Kulean Microsystems

USA . 5,280 parts In-Stock

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5,280

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Problanco Electronics

Mexico . 3,503 parts In-Stock

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SupplyDigital Components

Austria . 2,572 parts In-Stock

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TANS Electronics

Latvia . 633 parts In-Stock

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UHIMA Technologies

Türkiye . 594 parts In-Stock

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Overview

Discover the excellence of the NSV60101DMR6T2G by Onsemi, a premium Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured with precision and quality in mind, this NPN transistor offers customers a reliable and efficient solution for their electronic needs. With a maximum VCEsat of 0.2V and a minimum DC current gain of 100, this transistor provides outstanding performance while operating at temperatures ranging from -55 to 150 °C. Whether you're looking for a component for automotive, industrial, or consumer electronics, the NSV60101DMR6T2G delivers unparalleled value and benefits that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SEPARATE, 2 ELEMENTS

This configuration allows for independent control of each element, increasing versatility in circuit design.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring fast response times and efficient operation.

Maximum VCEsat: 0.2 V

Low VCEsat value helps in reducing power consumption and improving efficiency in switching circuits.

Surface Mount: YES

Surface mount capability enables easy and compact integration of the transistor onto PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.53 W

With a high absolute maximum power dissipation, the transistor can handle high power levels without overheating.

Maximum Collector-Base Capacitance: 8 pF

Low collector-base capacitance ensures efficient high-frequency operation, essential for applications requiring fast switching speeds.

Maximum Collector-Emitter Voltage: 60 V

Offers a high collector-emitter voltage rating, making it suitable for use in various circuit designs with different voltage requirements.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, allowing for versatile use in different load conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60101DMR6T2G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.53 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

NSV60101DMR6T2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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