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NSV60600MZ4T3G

Onsemi

NSV60600MZ4T3G by Onsemi

NSV60600MZ4T3G by Onsemi is a PNP BJT transistor with 60V VCEO, 6A IC, and 2W power dissipation. Ideal for switching applications, it has a hFE of 70 and operates up to 150°C. This surface-mount device in a small outline package is AEC-Q101 compliant for automotive use.

Median Price

$0.376

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,650 parts In-Stock

1+ parts

$0.466

100+ parts

$0.190

1k+ parts

$0.177

10k+ parts

$0.171

3,650

$0.466

$0.190

$0.177

$0.171

DigiKey

USA . 5,420 parts In-Stock

1+ parts

$1.060

100+ parts

$0.430

1k+ parts

$0.300

10k+ parts

$0.273

5,420

$1.060

$0.430

$0.300

$0.273

Mouser Electronics

USA . 261 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.288

10k+ parts

-

261

$1.060

$0.431

$0.288

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Rochester

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

$0.271

1k+ parts

$0.225

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$0.200

64,000

-

$0.271

$0.225

$0.200

Verical

USA . 3,650 parts In-Stock

1+ parts

-

100+ parts

$0.190

1k+ parts

$0.177

10k+ parts

$0.171

3,650

-

$0.190

$0.177

$0.171

Chip1Stop

Japan . 3,650 parts In-Stock

1+ parts

-

100+ parts

$0.286

1k+ parts

$0.211

10k+ parts

-

3,650

-

$0.286

$0.211

-

Distributors (In-Stock)

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Vyrian

USA . 1,310 parts In-Stock

1+ parts

$0.195

100+ parts

-

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1,310

$0.195

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Digiode

USA . 2,473 parts In-Stock

1+ parts

$0.211

100+ parts

-

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2,473

$0.211

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Cyclops Electronics Ltd

UK . 26,709 parts In-Stock

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26,709

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Chip Stock

USA . 25,000 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Ampacity Inc.

Singapore . 23,576 parts In-Stock

1+ parts

$0.189

100+ parts

-

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23,576

$0.189

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Corohmni

South Africa . 334 parts In-Stock

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$0.195

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334

$0.195

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Corphita

USA . 646 parts In-Stock

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$0.200

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646

$0.200

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GreenTree Electronics

Israel . 56,000 parts In-Stock

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56,000

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RC Electronics

USA . 52,418 parts In-Stock

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$0.280

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$0.250

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$0.250

52,418

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$0.280

$0.250

$0.250

Perfect Parts

USA . 20,496 parts In-Stock

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20,496

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Lixinc

USA . 12,244 parts In-Stock

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Kulean Microsystems

USA . 8,180 parts In-Stock

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8,180

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SupplyDigital Components

Austria . 7,499 parts In-Stock

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7,499

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Problanco Electronics

Mexico . 4,629 parts In-Stock

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4,629

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TANS Electronics

Latvia . 4,627 parts In-Stock

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4,627

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iodParts Technologies Inc.

India . 3,014 parts In-Stock

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$0.376

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3,014

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Kepictronics

USA . 3,000 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 959 parts In-Stock

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959

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Overview

Unleash the power of innovation with the NSV60600MZ4T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJT). Perfect for switching applications, this PNP transistor offers a single configuration and surface mount capability. Experience seamless performance with a maximum collector-emitter voltage of 60V and a maximum collector current of 6A. Elevate your projects with the NSV60600MZ4T3G and unlock endless possibilities for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used for active high signal switching applications, making this transistor suitable for switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB layout, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and orientation on the PCB, optimizing circuit layout.

Maximum Power Dissipation (Abs): 2W

With a maximum power dissipation of 2W, this transistor can handle higher power levels without risking damage.

Minimum DC Current Gain (hFE): 70

Higher DC current gain ensures better amplification and control of current flow, improving overall performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to perform reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 60V

With a maximum collector-emitter voltage of 60V, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in transistor performance, ensuring consistent operation.

Maximum Turn On Time (ton): 280 ns

Fast turn-on time of 280ns enables quick response in switching applications, enhancing overall circuit efficiency.

Maximum Collector Current (IC): 6A

High collector current rating of 6A allows the transistor to carry significant current loads without saturation.

Maximum Turn Off Time (toff): 685 ns

Low turn-off time of 685ns ensures quick cut-off of current flow, reducing power loss and improving efficiency.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB mounting and connection options, improving versatility in circuit design.

Case Connection: COLLECTOR

Collector case connection simplifies thermal management and ensures efficient heat dissipation during operation.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard indicates high reliability and quality, suitable for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100MHz allows for fast switching speed and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSV60600MZ4T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

685 ns

Maximum Turn On Time (ton):

280 ns

Trade Compliance

NSV60600MZ4T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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