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NRVTSM260ET1G

Onsemi

NRVTSM260ET1G by Onsemi

NRVTSM260ET1G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.65V. It operates b/w -55 to 175 °C, making it suitable for efficiency applications. This single-configured diode has a peak reflow temperature of 260°C and matte tin terminal finish.

Median Price

$0.212

Lifecycle Status

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6

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1k+

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Arrow

USA . 20 parts In-Stock

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$0.212

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$0.133

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$0.100

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20

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Chip1Stop

Japan . 20 parts In-Stock

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Digiode

USA . 2,379 parts In-Stock

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$0.017

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Vyrian

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Bristol Electronics

USA . 4,145 parts In-Stock

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$0.094

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$0.056

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$0.037

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Fibra_Brandt Electronic GMBH

Germany . 100 parts In-Stock

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Corphita

USA . 703 parts In-Stock

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$0.016

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Corohmni

South Africa . 326 parts In-Stock

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AZTECH Wire

Italy . 566 parts In-Stock

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$17.690

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Perfect Parts

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Kepictronics

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Metaverse IC Inc.

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Problanco Electronics

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Kulean Microsystems

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iodParts Technologies Inc.

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UHIMA Technologies

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SupplyDigital Components

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Overview

Unlock the power of efficiency with the NRVTSM260ET1G by Onsemi. Crafted with precision and quality in mind, this rectifier diode offers unparalleled performance in a compact package. Ideal for applications requiring high output current and low forward voltage, this Schottky diode is designed to maximize efficiency while maintaining reliability. Trust in Onsemi's reputation for excellence and innovation, and experience the benefits of superior technology with the NRVTSM260ET1G. Whether you're looking to optimize your power management system or enhance the performance of your electronic devices, this diode is the solution you've been searching for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it user-friendly.

Surface Mount: YES

Being surface mountable makes this diode easy to integrate into modern electronic devices and circuit boards.

Maximum Reverse Current: 12 uA

Low maximum reverse current ensures efficient performance and minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape allows for space-saving and efficient placement on circuit boards.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Application: EFFICIENCY

Designed for efficiency, making it a reliable choice for applications where power efficiency is crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

Wide range of minimum operating temperature allows for use in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Case Connection: CATHODE

Case connection at cathode ensures proper orientation and polarity during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature helps prevent thermal damage during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliability during the soldering process.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.65 V

Low maximum forward voltage drop leads to minimal power loss and increased efficiency.

Maximum Output Current: 2 A

High maximum output current capability makes it suitable for applications requiring higher power.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop for improved efficiency.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable surface mount connection.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage rating ensures reliable performance in various applications.

Maximum Non Repetitive Peak Forward Current: 50 A

High maximum non repetitive peak forward current capability allows for handling surge currents effectively.

Diode Element Material: SILICON

Silicon diode element material offers stable and reliable performance for long-lasting use.

Technical Specifications

Diodes & Rectifiers NRVTSM260ET1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTSM260ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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