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NRVTS860EMFST3G

Onsemi

NRVTS860EMFST3G by Onsemi

NRVTS860EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse current of 45uA. It operates b/w -55 to 175 °C, ideal for efficiency applications. The diode has a peak reflow temperature of 260°C and complies with AEC-Q101 standards.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Rochester

USA . 4,350 parts In-Stock

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Vyrian

USA . 6,321 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 272 parts In-Stock

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SupplyDigital Components

Austria . 6,426 parts In-Stock

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TANS Electronics

Latvia . 4,150 parts In-Stock

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Problanco Electronics

Mexico . 3,910 parts In-Stock

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Kulean Microsystems

USA . 2,728 parts In-Stock

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Corphita

USA . 2,392 parts In-Stock

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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Overview

Discover the NRVTS860EMFST3G by Onsemi - a high-quality Schottky rectifier diode designed for efficiency in a compact package. With a maximum output current of 8A and a maximum reverse voltage of 60V, this diode offers reliable performance for a wide range of applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this diode ensures superior quality and durability. Whether you're working on power management systems or electronic devices, the NRVTS860EMFST3G provides value, benefits, and advantages that meet your needs. Upgrade your projects with this cutting-edge diode and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the diode, ensuring long-term reliability.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on circuit boards, saving time and space.

Maximum Reverse Current: 45 uA

Low reverse current helps in minimizing power loss and improving efficiency of the circuit.

Maximum Operating Temperature: 175 °C

High operating temperature range makes it suitable for various industrial applications.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting AC to DC, making it a versatile choice for power supply applications.

Maximum Forward Voltage (VF): 0.62 V

Low forward voltage drop ensures minimal power loss and higher efficiency in the circuit.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and lower forward voltage drop, making it ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NRVTS860EMFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.62 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

45 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS860EMFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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