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NRVTS1045EMFST3G

Onsemi

NRVTS1045EMFST3G by Onsemi

NRVTS1045EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max reverse current of 50uA. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 45V and is designed for surface mount installation in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,879 parts In-Stock

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Digiode

USA . 2,209 parts In-Stock

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AZTECH Wire

Italy . 51 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,611 parts In-Stock

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SupplyDigital Components

Austria . 7,200 parts In-Stock

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Problanco Electronics

Mexico . 6,350 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

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Kulean Microsystems

USA . 2,828 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 905 parts In-Stock

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UHIMA Technologies

Türkiye . 788 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Overview

Experience unmatched efficiency and reliability with the NRVTS1045EMFST3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are ideal for a wide range of applications. Designed for optimal performance, this product offers customers exceptional value with its high output current capacity, low forward voltage, and superior Schottky technology. Whether you're looking to enhance power conversion or improve circuit efficiency, the NRVTS1045EMFST3G is the perfect solution. Trust Onsemi to provide you with the best-in-class components for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for a variety of applications.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and making assembly more efficient.

Maximum Reverse Current: 50 uA

Low reverse current ensures minimal power loss and high efficiency in operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it reliable in demanding environments.

Diode Type: RECTIFIER DIODE

Specifically designed for converting alternating current (AC) to direct current (DC), essential in many electronic devices.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, improving overall performance.

Technical Specifications

Diodes & Rectifiers NRVTS1045EMFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

210 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

50 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS1045EMFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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