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NRTS30120MFST3G

Onsemi

NRTS30120MFST3G by Onsemi

NRTS30120MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 30A and reverse test voltage of 120V. It is designed for applications requiring high efficiency and low forward voltage drop, making it ideal for power supply units and voltage regulation circuits.

Median Price

$2.070

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,980 parts In-Stock

1+ parts

$2.070

100+ parts

$0.895

1k+ parts

$0.674

10k+ parts

$0.551

4,980

$2.070

$0.895

$0.674

$0.551

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 950 parts In-Stock

1+ parts

$1.586

100+ parts

-

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-

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-

950

$1.586

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-

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Vyrian

USA . 100 parts In-Stock

1+ parts

$1.670

100+ parts

-

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-

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-

100

$1.670

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Flip Electronics

USA . 10,000 parts In-Stock

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10,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 947 parts In-Stock

1+ parts

$1.503

100+ parts

-

1k+ parts

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10k+ parts

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947

$1.503

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-

-

Corohmni

South Africa . 103 parts In-Stock

1+ parts

$1.670

100+ parts

-

1k+ parts

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103

$1.670

-

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Microchip USA

USA . 7,514 parts In-Stock

1+ parts

$4.037

100+ parts

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7,514

$4.037

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Kulean Microsystems

USA . 5,963 parts In-Stock

1+ parts

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5,963

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TANS Electronics

Latvia . 5,426 parts In-Stock

1+ parts

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5,426

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SupplyDigital Components

Austria . 5,184 parts In-Stock

1+ parts

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5,184

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Problanco Electronics

Mexico . 1,434 parts In-Stock

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1,434

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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527

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Overview

Experience superior quality and performance with the NRTS30120MFST3G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge diodes and rectifiers that provide reliable solutions for various applications. With its high reverse test voltage, low forward voltage, and maximum output current of 30A, this product offers exceptional value and benefits to customers looking for efficient and durable components. Whether you're working on power supplies, converters, or inverters, trust Onsemi to deliver top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long lifespan.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and simplifying assembly.

Maximum Reverse Current: 150 uA

Low reverse current minimizes power loss and improves overall efficiency.

Maximum Operating Temperature: 175 °C

Can operate efficiently even in high-temperature environments, providing versatility.

Diode Type: RECTIFIER DIODE

A rectifier diode allows current to flow in only one direction, making it ideal for converting AC to DC.

Technical Specifications

Diodes & Rectifiers NRTS30120MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

120 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-N4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

150 uA

Reverse Test Voltage:

120 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRTS30120MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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