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NRTS10100PFST3G

Onsemi

NRTS10100PFST3G by Onsemi

NRTS10100PFST3G by Onsemi is a Schottky rectifier diode with 100V reverse test voltage and 10A max output current. It operates b/w -55 to 175 °C, making it ideal for fast recovery applications. This single-terminal diode in a small outline package is surface mountable and AEC-Q100 compliant.

Median Price

$1.220

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,497 parts In-Stock

1+ parts

$1.220

100+ parts

$0.644

1k+ parts

$0.444

10k+ parts

$0.414

5,497

$1.220

$0.644

$0.444

$0.414

DigiKey

USA . 2,534 parts In-Stock

1+ parts

$1.230

100+ parts

$0.643

1k+ parts

$0.460

10k+ parts

$0.393

2,534

$1.230

$0.643

$0.460

$0.393

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.364

5,000

-

-

-

$0.364

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 890 parts In-Stock

1+ parts

$1.092

100+ parts

-

1k+ parts

-

10k+ parts

-

890

$1.092

-

-

-

Vyrian

USA . 1,551 parts In-Stock

1+ parts

$1.150

100+ parts

-

1k+ parts

-

10k+ parts

-

1,551

$1.150

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Flip Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 4,943 parts In-Stock

1+ parts

$0.950

100+ parts

$0.600

1k+ parts

$0.410

10k+ parts

-

4,943

$0.950

$0.600

$0.410

-

Corohmni

South Africa . 362 parts In-Stock

1+ parts

$0.970

100+ parts

-

1k+ parts

-

10k+ parts

-

362

$0.970

-

-

-

Corphita

USA . 2,095 parts In-Stock

1+ parts

$1.035

100+ parts

-

1k+ parts

-

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2,095

$1.035

-

-

-

Problanco Electronics

Mexico . 8,153 parts In-Stock

1+ parts

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100+ parts

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8,153

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-

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TANS Electronics

Latvia . 6,715 parts In-Stock

1+ parts

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100+ parts

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6,715

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

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Kulean Microsystems

USA . 1,616 parts In-Stock

1+ parts

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100+ parts

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1,616

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SupplyDigital Components

Austria . 1,209 parts In-Stock

1+ parts

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1,209

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UHIMA Technologies

Türkiye . 587 parts In-Stock

1+ parts

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587

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Overview

Discover the NRTS10100PFST3G by Onsemi, a top-quality rectifier diode designed for fast recovery applications. Manufactured by industry leader Onsemi, this diode offers reliable performance and durability. With a maximum output current of 10A and a maximum reverse voltage of 100V, this diode is perfect for a wide range of electronic projects. Whether you're a professional or hobbyist, the NRTS10100PFST3G provides exceptional value and benefits, making it an essential component for your next project. Trust in Onsemi for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments.

Maximum Reverse Current: 100 uA

Low reverse current ensures high efficiency and minimal power loss in the circuit.

Reverse Test Voltage: 100 V

A high reverse test voltage ensures reliable performance and protection against reverse polarity.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the diode to be used in a variety of applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making this product suitable for power supply applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching capabilities, making this diode efficient and responsive in circuits.

Technical Specifications

Diodes & Rectifiers NRTS10100PFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.78 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PSSO-F3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q100

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRTS10100PFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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