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NRTS1560PFST3G

Onsemi

NRTS1560PFST3G by Onsemi

NRTS1560PFST3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 60V and forward voltage of 0.64V. It has a max output current of 15A, making it suitable for fast recovery applications. With an operating temperature range from -55 to 175 °C, this diode is ideal for high-performance electronic devices.

Median Price

$1.205

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,398 parts In-Stock

1+ parts

$1.050

100+ parts

$0.524

1k+ parts

$0.340

10k+ parts

$0.318

2,398

$1.050

$0.524

$0.340

$0.318

DigiKey

USA . 2,786 parts In-Stock

1+ parts

$1.360

100+ parts

$0.565

1k+ parts

$0.399

10k+ parts

$0.283

2,786

$1.360

$0.565

$0.399

$0.283

Flip Electronics (Authorized)

USA . 14,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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14,890

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 958 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

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10k+ parts

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958

$0.940

-

-

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Vyrian

USA . 919 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

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10k+ parts

-

919

$0.990

-

-

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Flip Electronics

USA . 14,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

14,890

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 908 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

-

908

$0.891

-

-

-

Corohmni

South Africa . 275 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

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10k+ parts

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275

$0.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,747 parts In-Stock

1+ parts

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27,747

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SupplyDigital Components

Austria . 7,608 parts In-Stock

1+ parts

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7,608

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Kulean Microsystems

USA . 7,197 parts In-Stock

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7,197

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,095 parts In-Stock

1+ parts

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2,095

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TANS Electronics

Latvia . 1,974 parts In-Stock

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1,974

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UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Overview

Discover the unparalleled quality and reliability of the NRTS1560PFST3G diode by Onsemi, a leading manufacturer in the industry. This fast recovery diode offers superior performance and efficiency, making it ideal for a wide range of applications. With a maximum reverse test voltage of 60V and a maximum output current of 15A, this diode is perfect for high-power circuits where precision and speed are crucial. Trust Onsemi to deliver innovative solutions that exceed expectations and provide unmatched value for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, making it suitable for a variety of applications.

Config: SINGLE

Single configuration simplifies installation and usage of the diode in circuits.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly.

Maximum Reverse Current: 10 uA

Low reverse current ensures efficient and reliable operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape facilitates space-saving and efficient PCB layout.

Reverse Test Voltage: 60 V

High reverse test voltage provides protection against reverse voltage scenarios.

No. of Terminals: 3

Three terminals allow for easy connection in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the diode suitable for compact designs and applications.

Application: FAST RECOVERY

Fast recovery diode is ideal for high-speed switching applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures stable performance in various environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the diode to operate in cold conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connection.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and installation.

Diode Type: RECTIFIER DIODE

Rectifier diode is suitable for converting AC to DC and other rectification applications.

Maximum Forward Voltage (VF): 0.64 V

Low forward voltage drop ensures efficient conduction of current.

Maximum Output Current: 15 A

High output current rating allows the diode to handle large current requirements.

Technology: SCHOTTKY

Schottky technology provides fast switching and low forward voltage drop characteristics.

Terminal Form: FLAT

Flat terminal form enables easy and secure soldering onto PCBs.

Maximum Repetitive Peak Reverse Voltage: 60 V

High repetitive peak reverse voltage rating ensures protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 200 A

High non-repetitive peak forward current capability allows the diode to withstand surge currents.

Diode Element Material: SILICON

Silicon material offers stable and reliable performance for the diode.

Technical Specifications

Diodes & Rectifiers NRTS1560PFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.64 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRTS1560PFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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