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NRTS6100TFSTAG

Onsemi

NRTS6100TFSTAG by Onsemi

NRTS6100TFSTAG by Onsemi is a Schottky rectifier diode with a max output current of 6A and reverse test voltage of 100V. Its small outline package makes it suitable for surface mount applications in various electronic circuits. With a temperature range from -55 to 175 °C, it is ideal for high-performance devices requiring efficient power management.

Median Price

$0.985

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,836 parts In-Stock

1+ parts

$0.980

100+ parts

$0.385

1k+ parts

$0.296

10k+ parts

$0.186

1,836

$0.980

$0.385

$0.296

$0.186

Mouser Electronics

USA . 610 parts In-Stock

1+ parts

$0.990

100+ parts

$0.386

1k+ parts

$0.311

10k+ parts

$0.273

610

$0.990

$0.386

$0.311

$0.273

Avnet

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,500

-

-

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-

Distributors (In-Stock)

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Digiode

USA . 1,844 parts In-Stock

1+ parts

$0.694

100+ parts

-

1k+ parts

-

10k+ parts

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1,844

$0.694

-

-

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.488

18,000

-

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-

$0.488

Vyrian

USA . 6,833 parts In-Stock

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6,833

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,248 parts In-Stock

1+ parts

$0.657

100+ parts

-

1k+ parts

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10k+ parts

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2,248

$0.657

-

-

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Corohmni

South Africa . 256 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

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256

$0.680

-

-

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AZTECH Wire

Italy . 1,011 parts In-Stock

1+ parts

$14.360

100+ parts

-

1k+ parts

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10k+ parts

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1,011

$14.360

-

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QUARKTWIN TECHNOLOGY LTD

USA . 25,113 parts In-Stock

1+ parts

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25,113

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Problanco Electronics

Mexico . 8,332 parts In-Stock

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8,332

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Kulean Microsystems

USA . 6,574 parts In-Stock

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6,574

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SupplyDigital Components

Austria . 6,256 parts In-Stock

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6,256

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TANS Electronics

Latvia . 4,996 parts In-Stock

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4,996

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UHIMA Technologies

Türkiye . 956 parts In-Stock

1+ parts

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956

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Overview

Discover the superior quality and reliability of the NRTS6100TFSTAG by Onsemi, a leading manufacturer in the industry of diodes & rectifiers. This cutting-edge product offers a wide range of applications, ensuring optimal performance in various electronic devices. With its high efficiency and durable design, customers can trust in the value and benefits this product provides. Upgrade your electronics with the NRTS6100TFSTAG and experience the advantages of top-notch technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diode, making it suitable for various applications.

Maximum Reverse Current: 50 uA

Ensures efficient operation with minimal leakage current, enhancing overall performance.

Maximum Operating Temperature: 175 °C

Can withstand higher temperatures, making it ideal for applications where heat dissipation is crucial.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring reliable conversion of AC to DC.

Diode Element Material: SILICON

Silicon diodes are known for their stability and consistent performance, making this diode a reliable choice.

Technical Specifications

Diodes & Rectifiers NRTS6100TFSTAG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

100 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

S-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRTS6100TFSTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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