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NRTS660MFDT1G

Onsemi

NRTS660MFDT1G by Onsemi

NRTS660MFDT1G by Onsemi is a Schottky rectifier diode with 60V peak reverse voltage and 3A output current. It operates b/w -55 °C to 175°C, suitable for applications requiring high efficiency and low forward voltage drop in a compact small outline package. Ideal for surface mount designs needing fast switching capabilities.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,987 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,641 parts In-Stock

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Problanco Electronics

Mexico . 5,980 parts In-Stock

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TANS Electronics

Latvia . 4,952 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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SupplyDigital Components

Austria . 2,062 parts In-Stock

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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Corohmni

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Overview

Discover the power of the Onsemi NRTS660MFDT1G, a top-of-the-line Schottky rectifier diode that offers unparalleled quality and reliability. With its advanced technology and superior design, this diode delivers maximum output current of 3A and a maximum repetitive peak reverse voltage of 60V, making it the perfect choice for a wide range of applications. From power supplies to battery charging systems, this diode ensures optimal performance and efficiency. Trust Onsemi, a renowned manufacturer in the industry, to provide you with a product that exceeds expectations and adds exceptional value to your projects. Experience the difference with the NRTS660MFDT1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Config: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for better control and flexibility in circuit designs.

Surface Mount: YES

The surface mount capability makes it easy to integrate into PCBs, saving space and simplifying assembly processes.

Maximum Reverse Current: 55 uA

Low reverse current helps improve efficiency and reduce power consumption in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape provides easy handling and installation in various electronics devices.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options in the circuit.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and performance even in demanding environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in a wide range of temperature conditions.

Terminal Position: DUAL

Dual terminal position facilitates easy connections and enhances circuit stability.

Case Connection: CATHODE

The cathode case connection simplifies circuit design and ensures proper polarity.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC current, making it suitable for various power applications.

Maximum Forward Voltage (VF): 0.75 V

Low forward voltage drop of 0.75V reduces power losses and improves efficiency in the circuit.

Maximum Output Current: 3 A

High maximum output current of 3A allows for handling higher loads and power requirements.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, making it suitable for high frequency applications.

Terminal Form: FLAT

Flat terminal form provides easy soldering and ensures secure connections in the circuit.

No. of Elements: 2

Having 2 elements allows for better current handling capacity and overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage of 60V ensures protection against reverse voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 80 A

High maximum non-repetitive peak forward current of 80A allows for handling short duration high current pulses.

Diode Element Material: SILICON

Silicon diode element material offers stable performance and reliability in various operating conditions.

Technical Specifications

Diodes & Rectifiers NRTS660MFDT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-F6

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

55 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRTS660MFDT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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