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NRTST40H100CTG

Onsemi

NRTST40H100CTG by Onsemi

NRTST40H100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -55 to 150°C, has a max reverse voltage of 100V, and is ideal for applications requiring high efficiency.

Median Price

$1.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 188 parts In-Stock

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$1.300

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$1.300

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188

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$1.300

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Flip Electronics (Authorized)

USA . 13,424 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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$0.731

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200

$0.731

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Digiode

USA . 1,291 parts In-Stock

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$1.235

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1,291

$1.235

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Flip Electronics

USA . 13,424 parts In-Stock

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13,424

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Vyrian

USA . 4,454 parts In-Stock

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4,454

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Distributors (Availability)

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Corohmni

South Africa . 299 parts In-Stock

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$0.717

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299

$0.717

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Continental Prestige Electronics

USA . 2,728 parts In-Stock

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$0.731

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-

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$0.717

2,728

$0.731

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$0.717

Argo Parts USA

USA . 1,522 parts In-Stock

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$0.731

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1,522

$0.731

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Semicontronic

India . 6,683 parts In-Stock

1+ parts

$1.100

100+ parts

$1.072

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$1.067

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6,683

$1.100

$1.072

$1.067

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Ampacity Inc.

Singapore . 6,588 parts In-Stock

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$1.100

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6,588

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Corphita

USA . 2,145 parts In-Stock

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$1.170

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2,145

$1.170

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Microchip USA

USA . 226 parts In-Stock

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$6.825

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226

$6.825

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Andel Nordic

Denmark . 3,821 parts In-Stock

1+ parts

$113.750

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$79.625

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$79.625

3,821

$113.750

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$79.625

$79.625

Perfect Parts

USA . 23,855 parts In-Stock

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23,855

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TANS Electronics

Latvia . 8,379 parts In-Stock

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8,379

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SupplyDigital Components

Austria . 6,411 parts In-Stock

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Problanco Electronics

Mexico . 2,479 parts In-Stock

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2,479

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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823

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Kulean Microsystems

USA . 519 parts In-Stock

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519

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Overview

When it comes to efficiency and high performance, look no further than the NRTST40H100CTG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are built to last. With its common cathode configuration and Schottky technology, this product offers maximum output current of 20A and a maximum reverse voltage of 100V. Ideal for various applications requiring precision and reliability, the NRTST40H100CTG is the perfect solution for those seeking superior quality at a great value. Elevate your projects with Onsemi's cutting-edge technology and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a long lifespan.

Maximum Reverse Current: 50 uA

Low reverse current ensures minimal power loss and improved efficiency.

Maximum Operating Temperature: 150 °C

Can handle high temperatures, suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification tasks, ensuring reliable and efficient performance.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speeds, enhancing efficiency.

Technical Specifications

Diodes & Rectifiers NRTST40H100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.76 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

NRTST40H100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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