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NRTS6100TFSTBG

Onsemi

NRTS6100TFSTBG by Onsemi

NRTS6100TFSTBG by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward voltage of 0.68V. It has a max output current of 6A, making it ideal for applications requiring high efficiency power conversion in small outline packages. With a temperature range from -55 to 175 °C, it is suitable for various electronic devices.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,230 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 107 parts In-Stock

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$15.120

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107

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Kulean Microsystems

USA . 7,069 parts In-Stock

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Problanco Electronics

Mexico . 6,341 parts In-Stock

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TANS Electronics

Latvia . 3,372 parts In-Stock

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SupplyDigital Components

Austria . 2,048 parts In-Stock

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Corphita

USA . 1,853 parts In-Stock

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UHIMA Technologies

Türkiye . 851 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Discover the NRTS6100TFSTBG by Onsemi, a cutting-edge Schottky rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this rectifier diode is perfect for a wide range of applications. With a high maximum output current of 6A and a low forward voltage of 0.68V, this diode provides exceptional efficiency and power handling capabilities. The NRTS6100TFSTBG's small outline package and dual terminal position make it easy to integrate into any design, while its matte tin terminal finish ensures long-term durability. Trust Onsemi for quality components that deliver superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 50 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

Allows the diode to function reliably in high temperature environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this product versatile and useful in many electronic circuits.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, enhancing the efficiency of the circuit.

Technical Specifications

Diodes & Rectifiers NRTS6100TFSTBG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

100 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

S-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRTS6100TFSTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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