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NRTS1060PFST3G

Onsemi

NRTS1060PFST3G by Onsemi

NRTS1060PFST3G by Onsemi is a Schottky rectifier diode with 60V reverse test voltage, 10A max output current, and 0.66V max forward voltage. Ideal for applications requiring high efficiency power conversion in small outline packages.

Median Price

$0.915

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,685 parts In-Stock

1+ parts

$0.910

100+ parts

$0.470

1k+ parts

$0.302

10k+ parts

$0.280

4,685

$0.910

$0.470

$0.302

$0.280

DigiKey

USA . 4,154 parts In-Stock

1+ parts

$0.920

100+ parts

$0.470

1k+ parts

$0.321

10k+ parts

$0.266

4,154

$0.920

$0.470

$0.321

$0.266

Flip Electronics (Authorized)

USA . 24,840 parts In-Stock

1+ parts

-

100+ parts

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24,840

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 810 parts In-Stock

1+ parts

$0.694

100+ parts

-

1k+ parts

-

10k+ parts

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810

$0.694

-

-

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Vyrian

USA . 338 parts In-Stock

1+ parts

$0.730

100+ parts

-

1k+ parts

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10k+ parts

-

338

$0.730

-

-

-

Flip Electronics

USA . 19,840 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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19,840

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 816 parts In-Stock

1+ parts

$0.657

100+ parts

-

1k+ parts

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10k+ parts

-

816

$0.657

-

-

-

Corohmni

South Africa . 66 parts In-Stock

1+ parts

$0.730

100+ parts

-

1k+ parts

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10k+ parts

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66

$0.730

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QUARKTWIN TECHNOLOGY LTD

USA . 15,402 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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15,402

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Problanco Electronics

Mexico . 6,984 parts In-Stock

1+ parts

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6,984

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Kulean Microsystems

USA . 6,296 parts In-Stock

1+ parts

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6,296

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TANS Electronics

Latvia . 6,271 parts In-Stock

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6,271

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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SupplyDigital Components

Austria . 2,774 parts In-Stock

1+ parts

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2,774

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UHIMA Technologies

Türkiye . 709 parts In-Stock

1+ parts

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709

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Overview

Looking for a reliable and high-quality diode for your electronic projects? Look no further than the NRTS1060PFST3G by Onsemi. With its advanced Schottky technology and maximum forward voltage of 0.66V, this rectifier diode offers superior performance in a compact package. Whether you're building power supplies, battery chargers, or voltage regulators, this diode's 10A maximum output current and 60V reverse test voltage have got you covered. Trust Onsemi's reputation for excellence and choose the NRTS1060PFST3G for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it suitable for various environmental conditions.

Config: SINGLE

Having a single configuration simplifies the design and installation process, making it easier to work with.

Surface Mount: YES

Being surface mountable makes it convenient for automated assembly processes and saves space on the circuit board.

Maximum Reverse Current: 350 uA

The low maximum reverse current indicates efficiency and reliability in preventing reverse flow of current.

Package Shape: RECTANGULAR

The rectangular shape allows for easy and secure placement on the circuit board.

No. of Terminals: 3

With 3 terminals, it offers versatile connectivity options for various circuit configurations.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures stability and reliability even in demanding industrial applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature makes it suitable for a wide range of environments, including cold climates.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it ideal for power supply applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and high switching speed, making the diode efficient for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NRTS1060PFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

350 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRTS1060PFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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