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NRTS1260PFST3G

Onsemi

NRTS1260PFST3G by Onsemi

NRTS1260PFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.66V and output current of 12A. It operates b/w -55 °C to 175°C, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package with surface mount capability enhances its versatility in various circuit designs.

Median Price

$1.470

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,361 parts In-Stock

1+ parts

$1.260

100+ parts

$0.656

1k+ parts

$0.455

10k+ parts

$0.424

4,361

$1.260

$0.656

$0.455

$0.424

DigiKey

USA . 3,901 parts In-Stock

1+ parts

$1.680

100+ parts

$0.708

1k+ parts

$0.507

10k+ parts

$0.371

3,901

$1.680

$0.708

$0.507

$0.371

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 780 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

-

10k+ parts

-

780

$0.940

-

-

-

Vyrian

USA . 2,171 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

-

10k+ parts

-

2,171

$0.990

-

-

-

Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,625 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

-

1,625

$0.891

-

-

-

Component Stockers USA

USA . 6,907 parts In-Stock

1+ parts

$0.950

100+ parts

$0.610

1k+ parts

$0.420

10k+ parts

-

6,907

$0.950

$0.610

$0.420

-

Corohmni

South Africa . 108 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

-

10k+ parts

-

108

$0.990

-

-

-

Kulean Microsystems

USA . 8,272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,272

-

-

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Problanco Electronics

Mexico . 6,382 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,382

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SupplyDigital Components

Austria . 3,974 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,974

-

-

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TANS Electronics

Latvia . 2,397 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,397

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UHIMA Technologies

Türkiye . 342 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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342

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-

Overview

Unlock the power of innovation with the NRTS1260PFST3G by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers unparalleled performance and reliability. Ideal for a wide range of applications, from power supplies to automotive electronics, this product ensures seamless operation in any environment. Trust in Onsemi's reputation for excellence and invest in a product that delivers superior value and efficiency. Experience the difference with the NRTS1260PFST3G and take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body provides good insulation and protection, making the diode durable and long-lasting.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications where only one rectifier diode is needed.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Current: 350 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular package shape makes the diode easy to handle and mount in various electronic devices.

Reverse Test Voltage: 60 V

High reverse test voltage provides a wide operating voltage range for reliable performance in diverse applications.

No. of Terminals: 3

Three terminals offer flexibility in connection options and facilitate proper circuit integration.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact designs in electronic equipment.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures stable performance in demanding thermal environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for usage in extreme cold conditions without compromising functionality.

Terminal Position: DUAL

Dual terminal position provides versatility in circuit connectivity and enhances installation flexibility.

Case Connection: CATHODE

Cathode case connection simplifies polarity identification and facilitates proper orientation during installation.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power and enables reliable rectification in electronic circuits.

Maximum Forward Voltage (VF): 0.66 V

Low maximum forward voltage reduces power loss and enhances energy efficiency in the circuit.

Maximum Output Current: 12 A

High maximum output current capability allows for handling larger current loads in various applications.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed, low forward voltage drop, and high efficiency in rectification tasks.

Terminal Form: FLAT

Flat terminal form simplifies soldering and connection processes, ensuring secure and reliable electrical contacts.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage withstands voltage spikes and protects the diode from reverse voltage damage.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current handling capacity makes the diode suitable for surge protection and high-power applications.

Diode Element Material: SILICON

Silicon diode element material provides reliable and stable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NRTS1260PFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

350 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRTS1260PFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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