Loading...

NRTSAF260ET3G

Onsemi

NRTSAF260ET3G by Onsemi

NRTSAF260ET3G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.65V. It operates b/w -65 °C to 175°C, ideal for efficiency applications. This single-configured diode has a peak reflow temperature of 260°C and max reverse current of 12uA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,034 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,034

-

-

-

-

Digiode

USA . 1,172 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,172

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 6,011 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,011

-

-

-

-

SupplyDigital Components

Austria . 4,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,890

-

-

-

-

Problanco Electronics

Mexico . 2,517 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,517

-

-

-

-

Corphita

USA . 1,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,841

-

-

-

-

UHIMA Technologies

Türkiye . 365 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

365

-

-

-

-

Corohmni

South Africa . 232 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

232

-

-

-

-

Kulean Microsystems

USA . 57 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

57

-

-

-

-

Overview

Discover the NRTSAF260ET3G by Onsemi, a top-quality Schottky rectifier diode that offers superior efficiency for a wide range of applications. Manufactured by Onsemi, a trusted name in the industry, this diode provides customers with reliable performance and durability. With a maximum output current of 2A and a maximum forward voltage of 0.65V, this diode is perfect for various electronic devices and circuits. Experience the value and benefits of the NRTSAF260ET3G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and maintenance.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs.

Maximum Reverse Current: 12 uA

Low reverse current ensures efficient operation and minimizes power losses.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and designs.

No. of Terminals: 2

Two terminals simplify the connection and integration of the diode in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB board and allows for efficient heat dissipation.

Application: EFFICIENCY

Designed for efficiency-driven applications where power consumption is critical.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliability in various operating conditions.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range allows for usage in diverse environments.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes the risk of damaging the diode during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability of the connection.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting alternating current to direct current efficiently.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop reduces power losses and improves efficiency.

Maximum Output Current: 2 A

2 A maximum output current capability allows for high-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching and low forward voltage characteristics for high efficiency.

Terminal Form: FLAT

Flat terminal form provides a secure and stable connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 60 V

60 V maximum repetitive peak reverse voltage ensures compatibility with various voltage requirements.

Maximum Non Repetitive Peak Forward Current: 50 A

High non-repetitive peak forward current capability allows for surge protection in the circuit.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and efficiency in various applications.

Technical Specifications

Diodes & Rectifiers NRTSAF260ET3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRTSAF260ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19