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NLX2G16AMX1TCG

Onsemi

NLX2G16AMX1TCG by Onsemi

NLX2G16AMX1TCG by Onsemi is a Logic Gates IC with 10.2ns Propagation Delay, suitable for military applications. It operates at 1.65-5.5V, has 6 terminals in a small outline package, and can handle up to 4A current output.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,435 parts In-Stock

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Digiode

USA . 55 parts In-Stock

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Vigor

Singapore . 491 parts In-Stock

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$0.070

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491

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Andel Nordic

Denmark . 1,667 parts In-Stock

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$0.530

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$0.368

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$0.368

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$0.368

AZTECH Wire

Italy . 243 parts In-Stock

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$8.970

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QUARKTWIN TECHNOLOGY LTD

USA . 10,001 parts In-Stock

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Kulean Microsystems

USA . 7,253 parts In-Stock

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Problanco Electronics

Mexico . 5,435 parts In-Stock

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SupplyDigital Components

Austria . 4,273 parts In-Stock

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Perfect Parts

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Corphita

USA . 833 parts In-Stock

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UHIMA Technologies

Türkiye . 748 parts In-Stock

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TANS Electronics

Latvia . 600 parts In-Stock

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Microchip USA

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Kepictronics

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Corohmni

South Africa . 84 parts In-Stock

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Overview

Elevate your project with the NLX2G16AMX1TCG by Onsemi, a top-tier manufacturer known for quality logic gates. Designed for precision and reliability, this powerful component boasts a fast propagation delay and versatile surface mount capabilities. Perfect for a wide range of applications, this product offers exceptional value and benefits to customers seeking efficiency and performance. Upgrade your electronics with Onsemi's innovative technology and experience the advantages firsthand.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 10.2 ns

Fast propagation delay ensures quick response time for processing signals, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving time and facilitating automated assembly processes.

No. of Functions: 2

Having 2 functions in one package provides versatility and flexibility in circuit design, reducing the need for multiple components.

Nominal Supply Voltage / Vsup (V): 2.3

Operates at a moderate supply voltage of 2.3V, making it compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and ensure reliable performance in various applications.

Technical Specifications

Logic Gates NLX2G16AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-XDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

10.2 ns

Propagation Delay (tpd):

10.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G16AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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