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NLV74HCT541ADWRG

Onsemi

NLV74HCT541ADWRG by Onsemi

NLV74HCT541ADWRG by Onsemi is an 8-bit bus driver with 32ns propagation delay at 5V. It features a small outline package, operates b/w -55 to 125 °C, and has a max supply voltage of 5.5V. Ideal for applications requiring true output polarity and positive edge trigger type in military-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,806 parts In-Stock

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Digiode

USA . 1,598 parts In-Stock

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Vigor

Singapore . 144 parts In-Stock

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$0.540

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AZTECH Wire

Italy . 107 parts In-Stock

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$19.690

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Kulean Microsystems

USA . 5,344 parts In-Stock

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Problanco Electronics

Mexico . 4,000 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 2,472 parts In-Stock

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SupplyDigital Components

Austria . 2,056 parts In-Stock

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TANS Electronics

Latvia . 1,571 parts In-Stock

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Corphita

USA . 723 parts In-Stock

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Corohmni

South Africa . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Experience top-notch quality and reliability with the NLV74HCT541ADWRG by Onsemi, a leading manufacturer in the industry. This bus driver & transceiver is designed to deliver seamless performance in various applications, offering customers unparalleled value and benefits. With its 3-STATE output characteristics, TRUE polarity, and ENABLE LOW control type, this product ensures efficient operation and ease of use. Elevate your projects with the NLV74HCT541ADWRG and experience the advantages of high-quality technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for use in electronic devices.

Propagation Delay At Nominal Supply: 32 ns

Low propagation delay ensures fast and efficient signal transmission, making the product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable saves space and simplifies the manufacturing process, making the product convenient for integration into compact designs.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures reliability and durability, making the product suitable for automotive applications where quality is critical.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard voltage level of 5V allows compatibility with a wide range of systems and power sources.

No. of Bits: 8

Having 8 bits allows for a higher level of data processing and communication capabilities, making the product versatile and suitable for various applications.

Maximum Seated Height: 2.65 mm

The low profile design with a maximum seated height of 2.65 mm enables the product to be used in space-constrained applications without compromising performance.

Output Polarity: TRUE

The true output polarity ensures accurate signal transmission and compatibility with other components, making the product reliable and easy to integrate into existing systems.

Technical Specifications

Bus Driver & Transceivers NLV74HCT541ADWRG attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

HCT

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

12.8 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

3

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

32 ns

Propagation Delay (tpd):

32 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Translation:

N/A

Trigger Type:

POSITIVE EDGE

Width:

7.5 mm

Trade Compliance

NLV74HCT541ADWRG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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