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NLV74HC132ADG

Onsemi

NLV74HC132ADG by Onsemi

NLV74HC132ADG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and Schmitt Trigger. It operates at -55 to 125 °C with Vsup range of 2-6V. Ideal for military-grade applications requiring fast propagation delay of 190 ns in small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,839 parts In-Stock

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Digiode

USA . 2,459 parts In-Stock

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Vigor

Singapore . 348 parts In-Stock

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$0.450

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AZTECH Wire

Italy . 198 parts In-Stock

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$20.170

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Problanco Electronics

Mexico . 6,412 parts In-Stock

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Kulean Microsystems

USA . 6,202 parts In-Stock

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TANS Electronics

Latvia . 6,128 parts In-Stock

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Corphita

USA . 2,318 parts In-Stock

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SupplyDigital Components

Austria . 866 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Microchip USA

USA . 479 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Onsemi with the NLV74HC132ADG Logic Gates. With a focus on performance and durability, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this product offers customers value, efficiency, and peace of mind. Trust in Onsemi to provide you with the best solutions for your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and flexibility, making the product suitable for various environments and applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort in production.

No. of Functions: 4

With 4 functions in one component, this product offers versatility and space-saving advantages in circuit design.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making the product ideal for automotive applications and other demanding environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage, this product is compatible with a wide range of systems and circuits.

Propagation Delay (tpd): 190 ns

Low propagation delay of 190 ns ensures fast and efficient signal processing, making the product suitable for high-speed applications.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliable operation in extreme conditions, making this product a robust choice for mission-critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Logic Gates NLV74HC132ADG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

75 mA

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

NLV74HC132ADG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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