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NLV14093BDG

Onsemi

NLV14093BDG by Onsemi

NLV14093BDG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and Schmitt Trigger. It operates at -55 to 125 °C with a supply voltage range of 3-18 V. Ideal for military applications due to AEC-Q100 screening level and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,701 parts In-Stock

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Digiode

USA . 392 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Vigor

Singapore . 148 parts In-Stock

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$0.240

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AZTECH Wire

Italy . 812 parts In-Stock

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$7.947

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Ampacity Inc.

Singapore . 757 parts In-Stock

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$45.000

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TANS Electronics

Latvia . 6,750 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,086 parts In-Stock

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Kulean Microsystems

USA . 1,939 parts In-Stock

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Corphita

USA . 1,854 parts In-Stock

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Problanco Electronics

Mexico . 1,534 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Microchip USA

USA . 425 parts In-Stock

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UHIMA Technologies

Türkiye . 235 parts In-Stock

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Corohmni

South Africa . 91 parts In-Stock

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Overview

Discover the innovative NLV14093BDG by Onsemi, a top-quality Logic Gates product that offers unmatched performance and reliability. With a focus on precision engineering and cutting-edge technology, Onsemi ensures that every component meets the highest standards for maximum efficiency. This versatile product is ideal for a wide range of applications, providing customers with a seamless experience and exceptional value. Elevate your projects with the NLV14093BDG and experience the difference that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the logic gates, ensuring long-lasting performance.

Propagation Delay at Nominal Supply: 250 ns

Low propagation delay ensures fast processing speed, making these logic gates suitable for high-speed applications.

No. of Functions: 4

Having 4 functions in one device allows for greater functionality and flexibility in circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration with existing circuitry easier.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a wide range of environmental conditions.

Technical Specifications

Logic Gates NLV14093BDG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV14093BDG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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