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NLV14025BDR2G

Onsemi

NLV14025BDR2G by Onsemi

NLV14025BDR2G by Onsemi is a CMOS Logic Gate with 3 functions, 3 inputs, and 300 ns propagation delay at 5V. It is AEC-Q100 screened for automotive applications, operates b/w -55 to 125 °C, and has a small outline package style.

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1k+

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Vigor

Singapore . 467 parts In-Stock

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Component Stockers USA

USA . 36,286 parts In-Stock

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AZTECH Wire

Italy . 1,040 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

Latvia . 2,014 parts In-Stock

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Kulean Microsystems

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Overview

Enhance your electronic designs with the NLV14025BDR2G by Onsemi, a high-quality logic gate that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is ideal for a wide range of applications. With its advanced technology and military-grade temperature grade, this logic gate guarantees optimal functionality even in extreme conditions. Experience the value and benefits of this product as it delivers precision, efficiency, and durability to meet all your electronic needs. Upgrade your designs today with the NLV14025BDR2G and discover the difference it can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the logic gates, ensuring reliability in various operating conditions.

Propagation Delay at Nominal Supply: 300 ns

Fast propagation delay enables quick signal processing, making these logic gates suitable for applications requiring high-speed operation.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards, saving space and simplifying assembly processes.

No. of Functions: 3

Having multiple functions in a single component reduces the overall number of parts needed in a circuit, leading to cost savings and increased efficiency in design.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the logic gates meet automotive industry standards for reliability and quality, making them suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes these logic gates compatible with a wide range of systems and simplifies power supply requirements.

Load Capacitance (CL): 50 pF

Having a low load capacitance ensures that the logic gates can drive capacitive loads effectively without compromising signal integrity.

Power Supplies (V): 5/15

Compatibility with multiple power supply voltages (5V and 15V) makes these logic gates versatile and suitable for various circuit designs and applications.

No. of Terminals: 14

Having a sufficient number of terminals allows for easy connectivity and integration into complex circuits, providing flexibility in design.

Minimum Operating Temperature: -55 °C

Wide operating temperature range ensures reliable performance in harsh environmental conditions, making these logic gates suitable for a variety of applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures stable performance under elevated temperatures, enhancing the reliability of the logic gates in extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable for digital circuit applications.

Technical Specifications

Logic Gates NLV14025BDR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

300 ns

Propagation Delay (tpd):

300 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV14025BDR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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