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NLU1GT32MUTCG

Onsemi

NLU1GT32MUTCG by Onsemi

NLU1GT32MUTCG by Onsemi is a CMOS Logic Gate with 2 inputs, 26.7 ns propagation delay, and 50 pF load capacitance. Ideal for military applications due to its small outline package style and wide operating temperature range from -55 °C to 125°C. Suitable for surface mount assembly with a terminal pitch of 0.4 mm.

Median Price

$0.208

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 399,000 parts In-Stock

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$0.187

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$0.187

Rochester

USA . 307,797 parts In-Stock

1+ parts

-

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$0.225

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$0.186

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$0.166

307,797

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$0.225

$0.186

$0.166

Verical

USA . 204,000 parts In-Stock

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$0.208

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$0.208

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Digiode

USA . 243 parts In-Stock

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$0.175

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$0.175

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Vyrian

USA . 6,611 parts In-Stock

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6,611

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Distributors (Availability)

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Corphita

USA . 2,232 parts In-Stock

1+ parts

$0.166

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$0.166

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Vigor

Singapore . 824 parts In-Stock

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$0.180

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824

$0.180

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Corohmni

South Africa . 290 parts In-Stock

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$0.184

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290

$0.184

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AZTECH Wire

Italy . 82 parts In-Stock

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$21.300

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82

$21.300

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Continental Prestige Electronics

USA . 306,000 parts In-Stock

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$0.160

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QUARKTWIN TECHNOLOGY LTD

USA . 6,128 parts In-Stock

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Microchip USA

USA . 4,843 parts In-Stock

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SupplyDigital Components

Austria . 4,165 parts In-Stock

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TANS Electronics

Latvia . 4,041 parts In-Stock

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Problanco Electronics

Mexico . 2,895 parts In-Stock

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Kulean Microsystems

USA . 2,304 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Overview

Enhance your electronic designs with the NLU1GT32MUTCG logic gate from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. The NLU1GT32MUTCG is perfect for a wide range of applications, offering fast propagation delay and low power consumption. Its compact size and surface mount design make it easy to integrate into your projects. Experience the value and benefits of Onsemi's logic gates - upgrade your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for various applications.

Propagation Delay At Nominal Supply: 26.7 ns

Low propagation delay ensures fast response time, making this logic gate suitable for high-speed operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V is common and compatible with many electronic systems.

Load Capacitance (CL): 50 pF

Having a low load capacitance helps in reducing signal distortion and improving overall performance.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in a wide range of environments.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures functionality even in harsh conditions, making it versatile and reliable.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates NLU1GT32MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

26.7 ns

Propagation Delay (tpd):

26.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLU1GT32MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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