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NL17SZU04DBVT1G

Onsemi

NL17SZU04DBVT1G by Onsemi

NL17SZU04DBVT1G by Onsemi is a CMOS Logic Gate with 6.6ns Propagation Delay, suitable for military-grade applications. It operates at 3.3V with load capacitance of 50pF and can handle max current of 24A, making it ideal for high-speed signal processing in harsh environments. This small outline package has dual terminals and matte tin finish, ensuring reliable performance in extreme temperatures from -55 °C to 125°C.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 165,000 parts In-Stock

1+ parts

-

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$0.046

1k+ parts

$0.038

10k+ parts

$0.034

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$0.046

$0.038

$0.034

Verical

USA . 165,000 parts In-Stock

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$0.043

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$0.043

Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

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Digiode

USA . 1,595 parts In-Stock

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$0.036

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$0.036

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Flip Electronics

USA . 54,000 parts In-Stock

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Vyrian

USA . 5,447 parts In-Stock

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Corphita

USA . 1,220 parts In-Stock

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$0.034

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$0.034

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Corohmni

South Africa . 132 parts In-Stock

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$0.038

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132

$0.038

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AZTECH Wire

Italy . 538 parts In-Stock

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$14.570

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538

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QUARKTWIN TECHNOLOGY LTD

USA . 8,198 parts In-Stock

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Kulean Microsystems

USA . 6,782 parts In-Stock

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Problanco Electronics

Mexico . 6,326 parts In-Stock

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TANS Electronics

Latvia . 3,768 parts In-Stock

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SupplyDigital Components

Austria . 3,167 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

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UHIMA Technologies

Türkiye . 293 parts In-Stock

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Overview

Unlock the potential of your electronics with the NL17SZU04DBVT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their logic gates category. Perfect for a wide range of applications, this product offers unmatched value with its fast propagation delay, low power consumption, and military-grade temperature grade. Whether you're designing consumer electronics or industrial machinery, this versatile component will elevate your project to new heights. Trust Onsemi to provide the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the logic gates, ensuring reliable performance.

Propagation Delay At Nominal Supply: 6.6 ns

The low propagation delay ensures fast operation and high-speed processing in applications requiring quick response times.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and facilitating mass production.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common and widely compatible, making these logic gates suitable for a wide range of applications.

Load Capacitance (CL): 50 pF

The low load capacitance helps minimize signal degradation and enhances the overall performance of the logic gates.

No. of Terminals: 5

The compact design with 5 terminals allows for simple connectivity and integration into various electronic systems.

Maximum I (ol): 24 Amp

The high output current capability of 24 Amps ensures robust and efficient operation of the logic gates, suitable for demanding applications.

Minimum Operating Temperature: -55 °C

The wide temperature range from -55 °C ensures reliable operation in extreme environments, making these logic gates versatile and suitable for various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows for reliable performance in challenging conditions, enhancing the durability and longevity of the product.

Technology: CMOS

CMOS technology provides high noise immunity, low power consumption, and fast switching speeds, making these logic gates efficient and reliable for different applications.

Technical Specifications

Logic Gates NL17SZU04DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6.6 ns

Propagation Delay (tpd):

12.1 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL17SZU04DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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