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NL17SZ16XV5T2G-L22087

Onsemi

NL17SZ16XV5T2G-L22087 by Onsemi

NL17SZ16XV5T2G-L22087 by Onsemi is a logic gate with 5.2ns propagation delay at 1.8V, suitable for industrial applications. It has a load capacitance of 50pF and operates within -40 to 85 °C temperature range. This surface-mount device features a small outline package with very thin profile, making it ideal for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 48,000 parts In-Stock

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Vyrian

USA . 7,962 parts In-Stock

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Digiode

USA . 2,393 parts In-Stock

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Microchip USA

USA . 12,261 parts In-Stock

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$0.365

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AZTECH Wire

Italy . 704 parts In-Stock

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$14.350

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QUARKTWIN TECHNOLOGY LTD

USA . 24,283 parts In-Stock

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Problanco Electronics

Mexico . 6,277 parts In-Stock

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Kulean Microsystems

USA . 5,901 parts In-Stock

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TANS Electronics

Latvia . 3,718 parts In-Stock

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SupplyDigital Components

Austria . 3,010 parts In-Stock

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Corphita

USA . 1,324 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Corohmni

South Africa . 271 parts In-Stock

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Overview

Enhance your electronic projects with the NL17SZ16XV5T2G-L22087 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality logic gates for a variety of applications. With a nominal supply voltage of 1.8V and a propagation delay of just 5.2ns, this product offers swift and efficient performance. Whether you're working on industrial automation or consumer electronics, this Logic Gate is sure to add value to your designs. Upgrade your projects with Onsemi's reliable and versatile components today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable.

Propagation Delay At Nominal Supply: 5.2 ns

The low propagation delay at nominal supply ensures fast and efficient operation of the logic gates.

Surface Mount: YES

Being surface mountable, the product is easy to integrate into electronic circuits, saving space and facilitating automated assembly.

Nominal Supply Voltage: 1.8 V

The low nominal supply voltage of 1.8V results in lower power consumption and compatibility with low-power applications.

Maximum I (ol): 24 Amp

With a high maximum output current of 24A, the logic gates can drive heavy loads without issues.

Maximum Operating Temperature: 85 °C

The wide operating temperature range of up to 85 °C allows the product to be used in various environmental conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the logic gates reliable and efficient.

Technical Specifications

Logic Gates NL17SZ16XV5T2G-L22087 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.2 mm

Trade Compliance

NL17SZ16XV5T2G-L22087 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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