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NL17SZ16DBVT1G

Onsemi

NL17SZ16DBVT1G by Onsemi

NL17SZ16DBVT1G by Onsemi is a CMOS Logic Gate with 5.2ns Propagation Delay, 3.3V Nominal Voltage, and 50pF Load Capacitance. Ideal for military applications due to its MILITARY Temperature Grade and small form factor in a PLASTIC/EPOXY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,428 parts In-Stock

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Digiode

USA . 796 parts In-Stock

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AZTECH Wire

Italy . 988 parts In-Stock

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Kulean Microsystems

USA . 7,504 parts In-Stock

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SupplyDigital Components

Austria . 3,278 parts In-Stock

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TANS Electronics

Latvia . 3,245 parts In-Stock

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Corphita

USA . 2,015 parts In-Stock

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Problanco Electronics

Mexico . 783 parts In-Stock

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Microchip USA

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Vigor

Singapore . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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Corohmni

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Overview

Unlock the power of cutting-edge technology with the NL17SZ16DBVT1G by Onsemi. As a leader in the industry, Onsemi delivers top-quality logic gates that are essential for a wide range of applications. From optimizing circuit performance to enhancing overall functionality, this product offers unmatched value and benefits to customers. Experience faster propagation delays, reliable surface mount capabilities, and a wide operating temperature range. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the logic gates, making it a reliable choice for long-term use.

Propagation Delay At Nominal Supply: 5.2 ns

The low propagation delay ensures fast signal processing, making this product suitable for applications where speed is crucial.

Nominal Supply Voltage / Vsup: 3.3V

The 3.3V nominal supply voltage offers a good balance between power consumption and performance, making it versatile for various electronic designs.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance even in harsh environmental conditions, making it suitable for industrial and automotive applications.

Technology: CMOS

The CMOS technology used in the logic gates provides low power consumption and high noise immunity, making it an energy-efficient and reliable choice for digital circuits.

Technical Specifications

Logic Gates NL17SZ16DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NL17SZ16DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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