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NL17SZ11MU1TCG

Onsemi

NL17SZ11MU1TCG by Onsemi

NL17SZ11MU1TCG by Onsemi is a CMOS Logic Gate with 3 inputs, 9ns propagation delay at 3.3V. Suitable for military applications, it has a small outline package with very thin profile and operates b/w -55 to 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,285 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 646 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,042 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 5,913 parts In-Stock

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Corphita

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Microchip USA

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TANS Electronics

Latvia . 996 parts In-Stock

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Kulean Microsystems

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Corohmni

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Overview

Enhance your electronic projects with the NL17SZ11MU1TCG logic gate from Onsemi. Known for their top-notch quality and reliability, Onsemi's products are trusted by professionals worldwide. Ideal for a wide range of applications, this logic gate offers fast propagation delays and low power consumption, making it perfect for optimizing your circuits. With a compact design and easy surface mount installation, the NL17SZ11MU1TCG provides exceptional value and performance. Upgrade your projects today with this high-quality logic gate from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 9 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on PCBs, enhancing overall design flexibility.

Nominal Supply Voltage / Vsup (V): 3.3

This voltage range is common in many electronic systems, ensuring compatibility and ease of integration.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this product can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates NL17SZ11MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

19 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NL17SZ11MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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