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NL17SZ07MU1TCG

Onsemi

NL17SZ07MU1TCG by Onsemi

NL17SZ07MU1TCG by Onsemi is a CMOS Logic Gate with 6 terminals, Vsup range of 1.65V to 5.5V, and tpd of 9.5ns. Ideal for military-grade applications due to its -55 °C to 125°C operating temperature range and open-drain output characteristics in a small outline package.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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AZTECH Wire

Italy . 639 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,737 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 3,725 parts In-Stock

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Microchip USA

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Corphita

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UHIMA Technologies

Türkiye . 489 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Overview

Elevate your projects with the NL17SZ07MU1TCG logic gate by Onsemi, a top-tier manufacturer known for quality and reliability. Ideal for a wide range of applications, this small outline, very thin profile package offers a seamless integration experience. With a maximum power supply current of 100mA and a nominal supply voltage of 2.3V, this product delivers high performance and efficiency. Upgrade your designs with ease and precision using this military-grade technology that guarantees optimal results every time. Choose the NL17SZ07MU1TCG for unparalleled value and unmatched benefits in the world of logic gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and long-lasting performance.

Surface Mount: YES

Enables easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 2.3

Optimal voltage for efficient operation of the logic gates.

Propagation Delay (tpd): 9.5 ns

Fast signal propagation within the gates for quick response times.

Output Characteristics: OPEN-DRAIN

Allows for easy interfacing with other components in the circuit.

Technical Specifications

Logic Gates NL17SZ07MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

9.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL17SZ07MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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