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NL17SG17AMUTCG

Onsemi

NL17SG17AMUTCG by Onsemi

NL17SG17AMUTCG by Onsemi is a CMOS Logic Gate with 58.1ns Propagation Delay, operating b/w -55 to 125 °C. It has 6 terminals, a supply voltage range of 0.9V to 3.6V, and is MILITARY grade suitable for applications requiring fast signal processing in compact spaces like aerospace electronics.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 192,000 parts In-Stock

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-

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$0.145

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$0.121

10k+ parts

$0.107

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$0.145

$0.121

$0.107

DigiKey

USA . 192,000 parts In-Stock

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$0.180

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$0.180

Verical

USA . 189,000 parts In-Stock

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$0.134

189,000

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$0.134

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Digiode

USA . 1,408 parts In-Stock

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$0.113

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$0.113

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Vyrian

USA . 6,384 parts In-Stock

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6,384

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Corphita

USA . 947 parts In-Stock

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$0.107

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947

$0.107

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Corohmni

South Africa . 398 parts In-Stock

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$0.119

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398

$0.119

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AZTECH Wire

Italy . 1,134 parts In-Stock

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$17.060

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$17.060

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Kulean Microsystems

USA . 7,087 parts In-Stock

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SupplyDigital Components

Austria . 4,579 parts In-Stock

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TANS Electronics

Latvia . 1,851 parts In-Stock

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Problanco Electronics

Mexico . 605 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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Microchip USA

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Overview

Discover the high-quality NL17SG17AMUTCG logic gate by Onsemi, a leading manufacturer in the industry. This versatile component is perfect for a variety of applications, offering customers reliability and efficiency. With a small outline and very thin profile package style, this logic gate provides a nominal supply voltage of 3V and a propagation delay of 58.1 ns. Whether you're looking for military-grade technology or a reliable solution for your project, the NL17SG17AMUTCG from Onsemi delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gate.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard power supply voltages, ensuring easy integration into existing systems.

Propagation Delay (tpd): 58.1 ns

Offers fast response times, crucial for time-sensitive applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme cold conditions, ensuring reliability in harsh environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides excellent conductivity and corrosion resistance for reliable connections.

Maximum Seated Height: 0.55 mm

Low profile design helps in saving space and reducing overall system size.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Temperature Grade: MILITARY

Meets stringent military standards for durability and performance in extreme conditions.

Technical Specifications

Logic Gates NL17SG17AMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SG

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

58.1 ns

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NL17SG17AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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