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NIS5112D1R2G

Onsemi

NIS5112D1R2G by Onsemi

NIS5112D1R2G by Onsemi is a Power Management IC with 8 terminals, 12V nominal voltage, and adjustable threshold. It is used in power supply support circuits due to its small outline package style and matte tin terminal finish.

Median Price

$1.560

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,218 parts In-Stock

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-

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$1.640

10k+ parts

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6,218

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$1.640

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Rochester

USA . 1,923 parts In-Stock

1+ parts

-

100+ parts

$1.430

1k+ parts

$1.280

10k+ parts

$1.200

1,923

-

$1.430

$1.280

$1.200

Verical

USA . 1,923 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.600

10k+ parts

$1.500

1,923

-

-

$1.600

$1.500

Mouser Electronics

USA . 1,070 parts In-Stock

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-

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$1.520

1,070

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$1.520

Distributors (In-Stock)

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Vyrian

USA . 1,653 parts In-Stock

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$0.700

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-

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1,653

$0.700

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Digiode

USA . 2,166 parts In-Stock

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$1.501

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2,166

$1.501

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Component Sense

UK . 17,036 parts In-Stock

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17,036

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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Prism Electronics

USA . 2,205 parts In-Stock

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,037 parts In-Stock

1+ parts

$1.290

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-

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4,037

$1.290

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Vigor

Singapore . 253 parts In-Stock

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$1.390

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253

$1.390

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Corphita

USA . 1,825 parts In-Stock

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$1.422

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1,825

$1.422

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Corohmni

South Africa . 321 parts In-Stock

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$1.520

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321

$1.520

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Component Stockers USA

USA . 13,520 parts In-Stock

1+ parts

$1.610

100+ parts

$1.510

1k+ parts

$1.360

10k+ parts

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13,520

$1.610

$1.510

$1.360

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Microchip USA

USA . 4,163 parts In-Stock

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$10.433

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4,163

$10.433

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Perfect Parts

USA . 18,887 parts In-Stock

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Continental Prestige Electronics

USA . 11,218 parts In-Stock

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$1.160

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11,218

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$1.160

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A-Z Elektronik GmbH

Germany . 5,727 parts In-Stock

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5,727

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Kulean Microsystems

USA . 5,276 parts In-Stock

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TANS Electronics

Latvia . 5,199 parts In-Stock

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Problanco Electronics

Mexico . 5,021 parts In-Stock

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SupplyDigital Components

Austria . 3,800 parts In-Stock

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GreenTree Electronics

Israel . 1,295 parts In-Stock

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Authorized Procurement Solutions

USA . 1,195 parts In-Stock

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Futuretech Components

Singapore . 655 parts In-Stock

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655

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UHIMA Technologies

Türkiye . 643 parts In-Stock

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Kepictronics

USA . 32 parts In-Stock

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Overview

Power up your devices with the NIS5112D1R2G from Onsemi, a leading manufacturer in the Power Management ICs category. This small outline package offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. With adjustable threshold and a nominal supply voltage of 12V, this power supply support circuit ensures optimal performance while maximizing efficiency. Trust Onsemi to deliver top-notch products that provide exceptional value and benefits to customers. Choose the NIS5112D1R2G for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly.

Nominal Supply Voltage (Vsup): 12 V

Suitable for applications requiring a 12V power supply, providing compatibility and convenience.

No. of Terminals: 8

Sufficient number of terminals for connecting to various components in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and conductivity for reliable connections.

Width (mm): 3.9 mm

Compact width saves space on the PCB and allows for efficient layout design.

Minimum Supply Voltage (Vsup): 9 V

Supports a minimum supply voltage of 9V, providing flexibility for different power requirements.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering process for reliable assembly.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, suitable for standard PCB handling procedures.

Adjustable Threshold: YES

Allows for customization of threshold levels, offering adaptability to different system requirements.

Technical Specifications

Power Management ICs NIS5112D1R2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

9 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

NIS5112D1R2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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